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BC488BRL1G

Onsemi

BC488BRL1G by Onsemi

BC488BRL1G by Onsemi is a PNP BJT transistor with hFE of 15, VCE of 60V, and IC of 1A. Ideal for switching applications due to its high transition frequency of 150MHz. It comes in a cylindrical package with through-hole terminals for easy installation.

Median Price

$0.099

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 5,166 parts In-Stock

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$0.099

5,166

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$0.099

Rochester

USA . 3,966 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

3,966

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$0.079

$0.066

$0.059

DigiKey

USA . 3,966 parts In-Stock

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$0.100

3,966

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$0.100

Distributors (In-Stock)

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Digiode

USA . 2,444 parts In-Stock

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$0.062

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2,444

$0.062

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Vyrian

USA . 6,774 parts In-Stock

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6,774

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Distributors (Availability)

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Corphita

USA . 2,166 parts In-Stock

1+ parts

$0.058

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2,166

$0.058

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Corohmni

South Africa . 203 parts In-Stock

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$0.065

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203

$0.065

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Northwest PG Solutions

USA . 113 parts In-Stock

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$3.016

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113

$3.016

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AZTECH Wire

Italy . 1,108 parts In-Stock

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$20.150

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1,108

$20.150

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TANS Electronics

Latvia . 7,217 parts In-Stock

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Kulean Microsystems

USA . 3,720 parts In-Stock

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3,720

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Problanco Electronics

Mexico . 1,189 parts In-Stock

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UHIMA Technologies

Türkiye . 430 parts In-Stock

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430

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Native Components

USA . 272 parts In-Stock

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$2.660

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272

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$2.660

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SupplyDigital Components

Austria . 68 parts In-Stock

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Overview

Enhance your electronic projects with the BC488BRL1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that delivers reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for switching applications. With a maximum collector-emitter voltage of 60V and a maximum collector current of 1A, this transistor offers exceptional value and benefits to customers looking for a versatile and efficient component. Upgrade your designs today with the BC488BRL1G and experience the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material makes the package durable and resistant to damage, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in switching applications, making this transistor suitable for various switching tasks.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in tasks that require fast switching speeds.

Package Shape: ROUND

Round package shape allows for easy installation and placement in tight spaces, optimizing space utilization in electronic circuits.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in connecting to different circuit components for versatile use.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain of 15 ensures consistent and reliable amplification of input signals for accurate performance.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage of 60V, this transistor can handle higher voltage levels without breakdown, ensuring stability in operation.

Transistor Element Material: SILICON

Silicon material for transistor element provides high conductivity and efficiency, resulting in optimal performance and reliability.

Maximum Collector Current (IC): 1 A

Maximum collector current of 1A allows this transistor to handle higher current loads, making it suitable for various power applications.

Terminal Finish: TIN SILVER COPPER

Terminal finish of Tin Silver Copper ensures good conductivity and corrosion resistance, enhancing the reliability and longevity of the connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount and connect the transistor in a circuit, simplifying the overall assembly process.

Peak Reflow Temperature °C: 260

With peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes during assembly without damage.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency of 150MHz allows this transistor to operate at high speeds, making it suitable for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC488BRL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC488BRL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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