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BC489BRL

Onsemi

BC489BRL by Onsemi

BC489BRL by Onsemi is a NPN BJT transistor with hFE of 160, VCE of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150 °C with fT of 200MHz in a cylindrical package suitable for through-hole mounting.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,254 parts In-Stock

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Digiode

USA . 952 parts In-Stock

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Native Components

USA . 447 parts In-Stock

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$1.634

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Northwest PG Solutions

USA . 2,217 parts In-Stock

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SupplyDigital Components

Austria . 6,912 parts In-Stock

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TANS Electronics

Latvia . 6,272 parts In-Stock

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Kulean Microsystems

USA . 2,997 parts In-Stock

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Problanco Electronics

Mexico . 1,269 parts In-Stock

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UHIMA Technologies

Türkiye . 711 parts In-Stock

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Corphita

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Corohmni

South Africa . 364 parts In-Stock

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Overview

Upgrade your electronic projects with the BC489BRL by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, known for their cutting-edge technology and innovative solutions, this NPN transistor is ideal for switching applications. With a minimum DC current gain of 160 and a maximum collector-emitter voltage of 80V, the BC489BRL provides outstanding value and efficiency. Whether you're a hobbyist or a professional, this transistor is sure to elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and reliable housing for the transistor, ensuring stable performance over time.

Polarity or Channel Type: NPN

Commonly used configuration for a wide range of applications, making it versatile and easily compatible with other components.

Configuration: SINGLE

Simplified design with single transistor configuration, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and fast operation.

Package Shape: ROUND

Compact round shape allows for easy installation and versatility in placement within a circuit board.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and stability in a circuit board.

No. of Terminals: 3

Simple 3-terminal design for easy integration and connections in a circuit.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides efficient use of space and easy handling during installation.

Minimum DC Current Gain (hFE): 160

High DC current gain ensures amplification and signal stability in various applications.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating allows for usage in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material provides reliable and consistent performance over time.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate collector currents, suitable for a variety of low to medium power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity for secure connections.

Terminal Position: BOTTOM

Bottom terminal position for easier and more secure mounting on a circuit board.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency for fast switching speed in applications where frequency response is important.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489BRL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489BRL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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