Loading...

BC489ARLRM

Onsemi

BC489ARLRM by Onsemi

BC489ARLRM by Onsemi is a NPN BJT transistor with hFE of 100, VCE of 80V, and fT of 200MHz. Ideal for switching applications due to its single configuration and max collector current of 0.5A. The through-hole package style makes it suitable for various electronic designs requiring high-speed performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,508 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,508

-

-

-

-

Vyrian

USA . 787 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

787

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 511 parts In-Stock

1+ parts

$2.020

100+ parts

-

1k+ parts

-

10k+ parts

-

511

$2.020

-

-

-

Northwest PG Solutions

USA . 1,967 parts In-Stock

1+ parts

$2.222

100+ parts

-

1k+ parts

-

10k+ parts

-

1,967

$2.222

-

-

-

SupplyDigital Components

Austria . 4,560 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,560

-

-

-

-

Kulean Microsystems

USA . 2,350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,350

-

-

-

-

Problanco Electronics

Mexico . 1,645 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,645

-

-

-

-

TANS Electronics

Latvia . 1,238 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,238

-

-

-

-

Corphita

USA . 1,177 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,177

-

-

-

-

Corohmni

South Africa . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

UHIMA Technologies

Türkiye . 37 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

37

-

-

-

-

Overview

Unleash the power of innovation with the BC489ARLRM by Onsemi. Crafted with precision and excellence, this Small Signal Bipolar Junction Transistor (BJT) offers unrivaled performance and reliability. Whether you're looking to amplify signals or control electrical currents, this NPN transistor is your go-to solution. From its durable plastic/epoxy body to its high DC current gain and maximum operating temperature of 150 °C, this transistor exceeds expectations in every aspect. Elevate your projects and experience seamless functionality with the BC489ARLRM - the ultimate choice for switching applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Offers high electron mobility and fast switching speeds, making it suitable for applications requiring quick response times.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various electronic systems.

Transistor Application: SWITCHING

Designed for efficient on/off switching operations, making it ideal for use in power control circuits.

Package Shape: ROUND

Allows for easy mounting and installation in circular layouts or applications with limited space.

Terminal Form: THROUGH-HOLE

Facilitates reliable connections to other components on a circuit board, ensuring stable performance.

No. of Terminals: 3

Simplifies circuit connections and reduces the risk of wiring errors during assembly.

Package Style (Meter): CYLINDRICAL

Provides a uniform and compact form factor, making it suitable for automated assembly processes.

Minimum DC Current Gain (hFE): 100

Ensures consistent amplification of input signals, improving overall circuit performance.

Maximum Operating Temperature: 150 °C

Can operate reliably in high-temperature environments without compromising performance or lifespan.

Maximum Collector-Emitter Voltage: 80 V

Suits applications requiring moderate voltage handling capabilities, offering flexibility for different circuit requirements.

Transistor Element Material: SILICON

Provides high efficiency and reliability for signal amplification and switching operations.

Maximum Collector Current (IC): 0.5 A

Can handle moderate levels of current flow, making it suitable for various power control applications.

Terminal Finish: TIN LEAD

Ensures good electrical conductivity and corrosion resistance for stable performance over time.

Terminal Position: BOTTOM

Facilitates easy soldering and circuit board mounting, simplifying the manufacturing process.

Nominal Transition Frequency (fT): 200 MHz

Enables fast switching speeds and high-frequency operation, making it suitable for applications requiring rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489ARLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489ARLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20