Loading...

BC489ARLRP

Onsemi

BC489ARLRP by Onsemi

BC489ARLRP by Onsemi is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. It is used for switching applications in a cylindrical package with through-hole terminals. Operating at up to 150 °C, it features silicon element material and has an fT of 200MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,960 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,960

-

-

-

-

Digiode

USA . 1,809 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,809

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 6,686 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,686

-

-

-

-

TANS Electronics

Latvia . 6,306 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,306

-

-

-

-

Problanco Electronics

Mexico . 3,377 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,377

-

-

-

-

Corphita

USA . 2,372 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,372

-

-

-

-

Northwest PG Solutions

USA . 1,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,512

-

-

-

-

Native Components

USA . 530 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

530

-

-

-

-

Corohmni

South Africa . 315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

315

-

-

-

-

UHIMA Technologies

Türkiye . 160 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

160

-

-

-

-

Kulean Microsystems

USA . 74 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

74

-

-

-

-

Overview

Enhance your electronic projects with the BC489ARLRP by Onsemi, a top-quality small signal bipolar junction transistor ideal for switching applications. Manufactured by the reputable Onsemi brand, this NPN transistor offers reliable performance and durability. Its high DC current gain and maximum operating temperature of 150 °C ensure optimal functionality in various circuit designs. Whether you're a hobbyist or a professional engineer, this product's value lies in its efficiency, versatility, and ease of use. Upgrade your projects today with the BC489ARLRP and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used in amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and integration, ideal for applications requiring single transistor operation.

Transistor Application: SWITCHING

Designed for efficient switching operations, ensuring high performance in switching applications.

Package Shape: ROUND

Facilitates easy mounting and installation, suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Enables easy soldering and connection to PCBs, ensuring reliable electrical connections.

No. of Terminals: 3

Provides necessary connections for proper transistor operation, simplifying circuit layouts.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications where thermal management is crucial.

Maximum Collector-Emitter Voltage: 80 V

Offers high voltage capability, making it suitable for applications requiring higher voltage handling.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring stable operation.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, suitable for various small signal applications.

Nominal Transition Frequency (fT): 200 MHz

Provides high frequency capabilities, ideal for applications requiring fast switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489ARLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489ARLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20