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BC489AZL1G

Onsemi

BC489AZL1G by Onsemi

BC489AZL1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 80V, ideal for switching applications. Featuring min. DC current gain of 100 and max. operating temp of 150 °C, it has a cylindrical package style suitable for through-hole mounting, making it efficient for low-power circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,025 parts In-Stock

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Vyrian

USA . 1,663 parts In-Stock

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SupplyDigital Components

Austria . 8,258 parts In-Stock

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TANS Electronics

Latvia . 8,221 parts In-Stock

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Problanco Electronics

Mexico . 7,064 parts In-Stock

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Kulean Microsystems

USA . 6,631 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,220 parts In-Stock

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Northwest PG Solutions

USA . 1,305 parts In-Stock

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Corphita

USA . 883 parts In-Stock

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UHIMA Technologies

Türkiye . 625 parts In-Stock

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Corohmni

South Africa . 349 parts In-Stock

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Native Components

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Overview

Discover the power of the BC489AZL1G by Onsemi, a top-quality small signal bipolar junction transistor designed for switching applications. Manufactured by Onsemi, known for their innovative and reliable electronic components, this NPN transistor offers unparalleled performance and durability. With a maximum collector-emitter voltage of 80V and a nominal transition frequency of 200 MHz, this transistor is perfect for a wide range of electronic projects. Trust Onsemi to deliver superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and widely applicable.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and reduces complexity in applications where only one transistor is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in tasks that require high-speed switching.

Package Shape: ROUND

The round package shape ensures easy mounting and installation in various electronic devices.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating or damage.

Minimum DC Current Gain (hFE): 100

A high minimum DC current gain ensures consistent and stable amplification in the transistor's operation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows for reliable operation in circuits with higher voltages.

Maximum Collector Current (IC): 0.5 A

With a high maximum collector current rating, this transistor can handle relatively high currents without damage.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency indicates fast response and switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489AZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489AZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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