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BC487B

Onsemi

BC487B by Onsemi

BC487B by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 160, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its single configuration and cylindrical package style. Operates at up to 150 °C, making it suitable for various electronic devices.

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SupplyDigital Components

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Problanco Electronics

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Overview

Enhance your electronic projects with the BC487B by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. Manufactured by Onsemi, this NPN transistor offers a single configuration with a minimum DC current gain of 160, ensuring reliable performance. With a maximum power dissipation of 0.625 W and a maximum collector-emitter voltage of 60 V, this transistor is versatile and efficient. Whether you're working on amplifiers, signal processing, or power management systems, the BC487B provides exceptional value, reliability, and performance that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides good corrosion resistance and thermal conductivity, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor suitable for a wide range of circuit designs.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid changes in current and voltage, making it ideal for power control circuits.

Package Shape: ROUND

The round shape of the package allows for easy mounting and installation in a variety of applications.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure and reliable connection to the circuit board, reducing the risk of connectivity issues.

No. of Terminals: 3

Having 3 terminals allows for proper biasing and control of the transistor, ensuring optimal performance in the circuit.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625W, this transistor can handle higher power levels without overheating, ensuring long-term reliability.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor, saving space in the circuit design and making it suitable for small electronic devices.

Minimum DC Current Gain (hFE): 160

A high minimum DC current gain of 160 ensures consistent amplification of the input signal, improving the overall performance of the transistor in amplification circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the transistor to function effectively in harsh environmental conditions without compromising performance.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60V, this transistor can handle higher voltages, making it suitable for a wide range of voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and stable operation, making them a reliable choice for various electronic applications.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5A allows the transistor to handle higher currents, making it suitable for power control and switching applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and corrosion resistance, ensuring a reliable connection to the circuit board.

Terminal Position: BOTTOM

The bottom terminal position simplifies the mounting process and ensures proper alignment on the circuit board, reducing installation errors.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235 °C allows for reliable soldering and assembly processes, ensuring long-term stability and performance.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200MHz, this transistor can switch signals at high speeds, making it suitable for fast switching applications in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC487B attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC487B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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