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BC489A

Onsemi

BC489A by Onsemi

BC489A by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W and min. DC current gain of 100, ideal for switching applications. It has a max. collector-emitter voltage of 80V, max. collector current of 0.5A, and operates up to 150 °C, making it suitable for various electronic circuits requiring high-speed performance in a through-hole package design.

Median Price

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Lifecycle Status

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4

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1k+

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Digiode

USA . 2,325 parts In-Stock

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Vyrian

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J2 Sourcing AB

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LittleDiode

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QUARKTWIN TECHNOLOGY LTD

USA . 25,884 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

Austria . 3,986 parts In-Stock

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TANS Electronics

Latvia . 1,641 parts In-Stock

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Northwest PG Solutions

USA . 1,300 parts In-Stock

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Native Components

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Corphita

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UHIMA Technologies

Türkiye . 491 parts In-Stock

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Corohmni

South Africa . 264 parts In-Stock

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Overview

Enhance your electronic projects with the BC489A Small Signal Bipolar Junction Transistor by Onsemi. With a focus on quality and reliability, Onsemi delivers top-notch components for various applications such as switching. The BC489A offers customers exceptional value with its high DC current gain, low power dissipation, and wide operating temperature range. Trust Onsemi for superior products that will take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides good protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications.

Configuration: SINGLE

Simplified design for ease of use and integration into circuits.

Transistor Application: SWITCHING

Optimized for fast switching operations in electronic circuits.

Package Shape: ROUND

Compact design that allows for space-saving placement on PCBs.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels, suitable for various applications.

Minimum DC Current Gain (hFE): 100

Provides consistent and reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures without degradation.

Maximum Collector-Emitter Voltage: 80 V

Sufficient voltage rating for most common applications.

Transistor Element Material: SILICON

Standard material known for its reliability and performance in transistors.

Maximum Collector Current (IC): 0.5 A

Adequate current handling capability for small signal applications.

Terminal Finish: TIN LEAD

Corrosion-resistant finish for long-term reliability.

Nominal Transition Frequency (fT): 200 MHz

High fT value indicates good high-frequency performance for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-140-0748, 5961011400748, 6615-14-041-7932, 6615140417932

NIIN

011400748, 140417932

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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