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BC487G

Onsemi

BC487G by Onsemi

BC487G by Onsemi is a NPN BJT transistor with hFE of 60, Vce of 60V, and fT of 200MHz. It is used for switching applications in electronics due to its single configuration and max collector current of 0.5A. The transistor comes in a cylindrical package with through-hole terminals made of silicon material.

Median Price

$0.080

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

$0.080

100+ parts

$0.075

1k+ parts

$0.068

10k+ parts

-

3,000

$0.080

$0.075

$0.068

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,697 parts In-Stock

1+ parts

$0.076

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1,697

$0.076

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Vyrian

USA . 5,991 parts In-Stock

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5,991

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Distributors (Availability)

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Corphita

USA . 2,050 parts In-Stock

1+ parts

$0.072

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-

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2,050

$0.072

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Corohmni

South Africa . 141 parts In-Stock

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$0.080

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141

$0.080

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AZTECH Wire

Italy . 864 parts In-Stock

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$21.030

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864

$21.030

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Component Stockers USA

USA . 662 parts In-Stock

1+ parts

$99.990

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662

$99.990

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SupplyDigital Components

Austria . 6,575 parts In-Stock

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6,575

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TANS Electronics

Latvia . 6,084 parts In-Stock

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6,084

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Problanco Electronics

Mexico . 4,636 parts In-Stock

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4,636

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Kulean Microsystems

USA . 3,457 parts In-Stock

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3,457

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Northwest PG Solutions

USA . 966 parts In-Stock

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$3.621

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966

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$3.621

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Native Components

USA . 779 parts In-Stock

1+ parts

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100+ parts

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$3.584

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779

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$3.584

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UHIMA Technologies

Türkiye . 381 parts In-Stock

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381

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Overview

Unlock the potential of your electronic projects with the BC487G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Small Signal Bipolar Junction Transistors (BJT) like the BC487G that are perfect for switching applications. With a maximum collector-emitter voltage of 60V and a nominal transition frequency of 200MHz, this NPN transistor offers reliable performance and efficiency. Whether you're a hobbyist or a professional, the BC487G provides the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, ideal for applications where weight and compactness are a concern.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration into common electronic circuits, making it versatile for a variety of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to implement in projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in switching circuits.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage loads, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making this transistor a dependable choice for various electronic projects.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate current loads, suitable for many common electronic circuits.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency allows for fast switching times, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC487G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC487G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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