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BC489

Onsemi

BC489 by Onsemi

BC489 by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.5A. It has a min. DC current gain of 60, suitable for switching applications at up to 150 °C operating temperature. The package style is cylindrical with through-hole terminals, ideal for small signal applications requiring high transition frequency (fT) of 200MHz.

Median Price

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Lifecycle Status

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13

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Sea View Technologies

USA . 13,500 parts In-Stock

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Bristol Electronics

USA . 13,500 parts In-Stock

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Digiode

USA . 2,439 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 750 parts In-Stock

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750

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ComSIT Distribution GmbH

Germany . 700 parts In-Stock

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700

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Zilex Electronics Inc.

Canada . 464 parts In-Stock

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Vyrian

USA . 406 parts In-Stock

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ABC Electronics Ltd.

UK . 151 parts In-Stock

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Manotoh

Italy . 54 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 35 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 16 parts In-Stock

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ECAB

Sweden . 15 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Native Components

USA . 147 parts In-Stock

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$0.073

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$0.070

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Northwest PG Solutions

USA . 2,158 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,610 parts In-Stock

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SupplyDigital Components

Austria . 6,300 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 3,272 parts In-Stock

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Problanco Electronics

Mexico . 2,665 parts In-Stock

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Perfect Parts

USA . 1,680 parts In-Stock

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Corphita

USA . 1,095 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 750 parts In-Stock

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750

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Kulean Microsystems

USA . 687 parts In-Stock

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Corohmni

South Africa . 359 parts In-Stock

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Assy Fe

Spain . 100 parts In-Stock

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UHIMA Technologies

Türkiye . 94 parts In-Stock

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Overview

Upgrade your electronic devices with the BC489 by Onsemi, a top-tier Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. Manufactured with high-quality materials and advanced technology, this NPN transistor offers reliability and efficiency like no other. Its compact package shape and round design make it easy to integrate into various projects. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 60, the BC489 provides optimum performance for your circuit needs. Trust Onsemi for superior quality and choose the BC489 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN configuration is commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate this transistor into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in high-speed switching circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in circular PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals enable secure physical connections and ease of soldering during assembly.

No. of Terminals: 3

Three terminals provide the necessary connections for power, input, and output signals in a compact package.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compact size and efficient heat dissipation for improved performance.

Minimum DC Current Gain (hFE): 60

High minimum DC current gain ensures consistent and stable amplification in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in demanding environments without overheating.

Maximum Collector-Emitter Voltage: 80 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels in switching applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making this transistor ideal for demanding applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current levels in various applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides excellent solderability and reliability, ensuring secure electrical connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and integration into compact electronic devices.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures reliable soldering during assembly without damaging the transistor.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency enables fast switching speeds and high-frequency operation in RF and digital circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC489 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC489 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-140-0748, 5961011400748

NIIN

011400748

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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