Loading...

SINGLE Small Signal Bipolar Junction Transistors (BJT) 956

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MMSTA06-7 by Diodes Incorporated

MMSTA06-7

Diodes Incorporated

Diodes Inc.'s MMSTA06-7 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150°C with fT of 100MHz. Its small outline package makes it suitable for surface mount designs.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMST3904-7 by Diodes Incorporated

MMST3904-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: Tin/Lead (Sn/Pb);

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

Not Qualified

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

10

SILICON

300 MHz

70 ns

MMST3906-7 by Diodes Incorporated

MMST3906-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

300 ns

70 ns

MMST4124-7 by Diodes Incorporated

MMST4124-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN LEAD;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

MMST4126-7 by Diodes Incorporated

MMST4126-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PDSO-G3;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

MMST4401-7 by Diodes Incorporated

MMST4401-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

255 ns

35 ns

MMBTA05-7 by Diodes Incorporated

MMBTA05-7

Diodes Incorporated

Diodes Inc.'s MMBTA05-7 is a NPN BJT transistor with hFE of 100, VCE of 60V, and IC of 0.5A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With fT at 100MHz, it's commonly used in isolated case connections.

ISOLATED

.5 A

60 V

SINGLE

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMBTA06-7 by Diodes Incorporated

MMBTA06-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;

ISOLATED

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

STX790A by STMicroelectronics

STX790A

STMicroelectronics

STX790A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its compact cylindrical package ensures efficient performance in various electronic circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

400 ns

430 ns

STPSA42-AP by STMicroelectronics

STPSA42-AP

STMicroelectronics

STPSA42-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 300V, power dissipation of 0.625W, and operates up to 150 °C. Ideal for efficient circuit designs in various electronic devices.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

STPSA92-AP by STMicroelectronics

STPSA92-AP

STMicroelectronics

STPSA92-AP by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max collector-emitter voltage of 300 V, power dissipation of 0.625 W, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in compact designs.

.5 A

300 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

MMBT6521LT1 by Onsemi

MMBT6521LT1

Onsemi

MMBT6521LT1 by Onsemi is a NPN BJT transistor with 300 min hFE, 0.3W power dissipation, and 25V collector-emitter voltage. Ideal for amplifier applications, it features a small outline package style and Gull Wing terminals for surface mount assembly. Operating at up to 150 °C, it offers reliable performance in various electronic circuits.

.1 A

25 V

SINGLE

300

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.3 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

2SC4081RT1 by Onsemi

2SC4081RT1

Onsemi

2SC4081RT1 by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 50V and max collector current of 0.1A. With a min DC current gain of 180, it's ideal for amplifier applications. This surface mount transistor has a small outline package style and operates up to 150 °C.

.1 A

50 V

SINGLE

180

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.2 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

MSB92ASWT1 by Onsemi

MSB92ASWT1

Onsemi

MSB92ASWT1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 300V, max collector current of 0.5A, and min DC current gain of 25. With a package style of small outline and surface mount capability, it operates at up to 150 °C.

.5 A

300 V

SINGLE

25

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

50 MHz

STX13005 by STMicroelectronics

STX13005

STMicroelectronics

STX13005 from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 2.8W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient circuit designs in various electronic devices.

3 A

400 V

SINGLE

8

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2DA1774S-7-F by Diodes Incorporated

2DA1774S-7-F

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;

.15 A

50 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

140 MHz

BC848AW-7-F by Diodes Incorporated

BC848AW-7-F

Diodes Incorporated

BC848AW-7-F by Diodes Inc. is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.2W, hFE of 110, and operates up to 150°C. With a max collector-emitter voltage of 30V and peak reflow temp of 260°C, it's suitable for small outline packages in high-frequency circuits up to 300MHz.

.1 A

30 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

BC858A-7-F by Diodes Incorporated

BC858A-7-F

Diodes Incorporated

Diodes Inc. BC858A-7-F is a PNP BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 125. Ideal for switching applications, it operates at up to 150°C, with VCE of 30V and IC of 0.1A. Package style is small outline SMT with matte tin finish in gull wing shape.

.1 A

30 V

SINGLE

125

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

BC858AW-7-F by Diodes Incorporated

BC858AW-7-F

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

30 V

SINGLE

125

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

BC858BW-7-F by Diodes Incorporated

BC858BW-7-F

Diodes Incorporated

BC858BW-7-F by Diodes Inc. is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 0.2W, hFE of 220, and operates up to 150°C. With a package style of small outline and surface mount capability, it offers high performance in compact designs.

.1 A

30 V

SINGLE

220

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

MMBT123S-7-F by Diodes Incorporated

MMBT123S-7-F

Diodes Incorporated

Diodes Incorporated MMBT123S-7-F is a NPN BJT transistor with 150 min hFE, 18V VCEO, and 1A IC. Ideal for switching applications, it has a max power dissipation of 0.3W in a small outline package suitable for surface mount technology.

1 A

18 V

SINGLE

150

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

MMBT4124-7-F by Diodes Incorporated

MMBT4124-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

MMST4124-7-F by Diodes Incorporated

MMST4124-7-F

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

PZT3906T1 by Onsemi

PZT3906T1

Onsemi

PZT3906T1 by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for applications requiring small outline package style, such as signal amplification in electronic circuits due to its high transition frequency of 250MHz and low turn-on time of 70ns.

COLLECTOR

.2 A

40 V

SINGLE

30

TO-261AA

R-PDSO-G4

e0

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.3 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

250 MHz

300 ns

70 ns

MMJT9410T1 by Onsemi

MMJT9410T1

Onsemi

MMJT9410T1 by Onsemi is a NPN BJT with 3W power dissipation, 30V max collector-emitter voltage, and 72MHz transition frequency. Ideal for small outline applications requiring high DC current gain and low collector current.

COLLECTOR

.01 A

30 V

SINGLE

60

R-PDSO-G3

e0

3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

30

SILICON

72 MHz

MMBT2907A-13 by Diodes Incorporated

MMBT2907A-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 100 ns;

.6 A

60 V

SINGLE

50

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

100 ns

45 ns

MMBT3904-13 by Diodes Incorporated

MMBT3904-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMBT3904T-13 by Diodes Incorporated

MMBT3904T-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN LEAD;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

250 ns

70 ns

MMBT3906-13 by Diodes Incorporated

MMBT3906-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

MMBT3906T-13 by Diodes Incorporated

MMBT3906T-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

.2 A

4.5 pF

40 V

SINGLE

30

R-PDSO-G3

e0

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

AEC-Q101

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

300 ns

70 ns

.4 V

BC327-016 by Onsemi

BC327-016

Onsemi

BC327-016 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.8A, and min DC current gain of 100. With a package style of cylindrical and max power dissipation of 0.625W, it operates at up to 150 °C.

.8 A

45 V

SINGLE

100

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

BC327-040 by Onsemi

BC327-040

Onsemi

BC327-040 by Onsemi is a PNP BJT transistor with hFE of 250, IC of 0.8A, and fT of 260MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and collector-emitter voltage of 45V. This through-hole transistor has a cylindrical package shape made from silicon material.

.8 A

45 V

SINGLE

250

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

PNP

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

260 MHz

2N5087G by Onsemi

2N5087G

Onsemi

2N5087G by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 250, and max. collector-emitter voltage of 50V. Ideal for amplifier applications due to its high transition frequency of 40MHz and max. operating temp. of 150°C in a cylindrical package style.

.05 A

50 V

SINGLE

250

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

40 MHz

DP0150ALP4-7 by Diodes Incorporated

DP0150ALP4-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

PNP

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

80 MHz

2N3904RLRMG by Onsemi

2N3904RLRMG

Onsemi

2N3904RLRMG by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 30, and fT of 300MHz. Ideal for low-power applications like amplification circuits due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A.

.2 A

40 V

SINGLE

30

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

300 MHz

250 ns

70 ns

QSX2TR by ROHM

QSX2TR

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 5 A;

5 A

30 V

SINGLE

270

R-PDSO-G6

e1

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

200 MHz

2DB1689-7 by Diodes Incorporated

2DB1689-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1.5 A;

1.5 A

12 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

2DB1694-7 by Diodes Incorporated

2DB1694-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1 A;

1 A

30 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

2DB1697-13 by Diodes Incorporated

2DB1697-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

12 V

SINGLE

270

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

140 MHz

2DB1714-13 by Diodes Incorporated

2DB1714-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

30 V

SINGLE

270

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

200 MHz

2DD2661-13 by Diodes Incorporated

2DD2661-13

Diodes Incorporated

2DD2661-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 2W, hFE of 270, and fT of 170MHz. Ideal for switching applications, it has a max collector-emitter voltage of 12V and max collector current of 2A. Suitable for surface mount with matte tin finish in a small outline package style.

COLLECTOR

2 A

12 V

SINGLE

270

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

170 MHz

2DD2678-13 by Diodes Incorporated

2DD2678-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

12 V

SINGLE

270

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

170 MHz

DN0150ALP4-7 by Diodes Incorporated

DN0150ALP4-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

60 MHz

DN0150BLP4-7 by Diodes Incorporated

DN0150BLP4-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

200

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

60 MHz

STX690A by STMicroelectronics

STX690A

STMicroelectronics

STX690A by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, a collector current of 3 A, and operates up to 150 °C. Its cylindrical package and through-hole terminals ensure easy integration in circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.9 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

MSB710-RT1G by Onsemi

MSB710-RT1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;

.5 A

50 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

2N5401RLRAG by Onsemi

2N5401RLRAG

Onsemi

2N5401RLRAG by Onsemi is a PNP BJT with max. VCE of 150V, IC of 0.6A, and hFE of 50. Ideal for amplifier applications due to its max. power dissipation of 1.5W and fT of 100MHz in a cylindrical package with through-hole terminals.

.6 A

150 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

100 MHz

2N5550RLRPG by Onsemi

2N5550RLRPG

Onsemi

2N5550RLRPG by Onsemi is a NPN BJT transistor with 140V VCEO, 0.6A IC, and 100MHz fT. Ideal for amplifier applications due to its 1.5W Ptot, hFE of 20, and operating temp up to 150 °C. Features through-hole terminals in a cylindrical package shape.

.6 A

140 V

SINGLE

20

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz