Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MPS3646RLRAG
Onsemi
MPS3646RLRAG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 15V and max current of 0.3A. It has a min DC current gain of 15, ideal for switching applications with a transition frequency of 350MHz. The package style is cylindrical, suitable for through-hole mounting in various electronic circuits.
.3 A
15 V
SINGLE
15
TO-92
O-PBCY-T3
e1
1
3
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
NPN
.625 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
SWITCHING
SILICON
350 MHz
28 ns
18 ns
MPS4124G
MPS4124G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 60, and operates at up to 150 °C. With a max collector-emitter voltage of 25V and max collector current of 0.2A, it offers reliable performance in various electronic circuits.
.2 A
25 V
60
AMPLIFIER
170 MHz
MPS6521G
MPS6521G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 25V and max current of 0.1A. With a min DC current gain of 300, it's ideal for amplifier applications at up to 150 °C operating temperature. The package style is cylindrical with through-hole terminals for easy installation.
LOW NOISE
.1 A
300
340 MHz
MPS6523G
MPS6523G by Onsemi is a PNP BJT transistor with hFE of 300, fT of 340 MHz, and IC of 0.1 A. Ideal for amplifier applications due to its max power dissipation of 0.625 W and operating temperature up to 150°C in a cylindrical package.
PNP
MPS6560G
MPS6560G by Onsemi is a NPN BJT transistor with 3 terminals and 0.625W power dissipation. Ideal for amplifier applications, it has a max collector-emitter voltage of 25V, hFE of 50, and operates up to 150 °C.
.5 A
50
60 MHz
MPS6727G
MPS6727G by Onsemi is a PNP BJT with 1W power dissipation, 40V max. collector-emitter voltage, and 50MHz transition frequency. Ideal for amplifier applications due to its single configuration and through-hole terminal form in a cylindrical package style.
1 A
40 V
1 W
50 MHz
MPS6729G
MPS6729G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 1W, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its single configuration and silicon element material, operating at up to 150 °C with a min DC current gain of 50 (hFE).
80 V
MPS8098G
MPS8098G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, max collector-emitter voltage of 60V, and min DC current gain of 75. This through-hole transistor operates up to 150°C and has a nominal transition frequency of 150MHz.
60 V
75
150 MHz
MPS8098RLRAG
MPS8098RLRAG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max power dissipation of 0.625W, hFE of 75, and max operating temp of 150 °C. With a max collector-emitter voltage of 60V and max collector current of 0.5A, it's suitable for various electronic circuits.
MPS8099G
MPS8099G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and can handle up to 80V collector-emitter voltage. With a transition frequency of 150MHz and operating temp of 150°C, it's suitable for various electronic circuits requiring high-speed switching capabilities.
MPS8099RLRAG
MPS8099RLRAG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and fT of 150MHz. With a max operating temp of 150°C and VCE of 80V, it's suitable for various electronic circuits.
MPS8099RLRMG
MPS8099RLRMG by Onsemi is a NPN BJT transistor with 3 terminals and 0.5A max collector current. With hFE of 75, it's ideal for amplifier applications. Operating at up to 150 °C, it has a max power dissipation of 0.625W in a cylindrical package.
MPS8099RLRPG
MPS8099RLRPG by Onsemi is a NPN BJT transistor with 3 terminals and max. power dissipation of 0.625W. With hFE of 75, it operates up to 150°C and handles max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its nominal transition frequency of 150MHz in a cylindrical package style.
MPS8598RLRAG
MPS8598RLRAG by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. It is used in amplifier applications due to its max. collector-emitter voltage of 60V and nominal transition frequency of 150MHz.
MPS8599G
MPS8599G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. It is used in amplifier applications due to its max. collector-emitter voltage of 80V and nominal transition frequency of 150MHz.
MPSA05RLRAG
MPSA05RLRAG by Onsemi is a NPN BJT transistor with 3 terminals and max. power dissipation of 0.625W. It has a min. DC current gain of 100, max. operating temp of 150 °C, and max. collector-emitter voltage of 60V. Ideal for amplifier applications due to its SILICON element material and cylindrical package style.
100
100 MHz
MPSA06RLG
MPSA06RLG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 100, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high transition frequency of 100MHz and max. operating temp. of 150 °C in a cylindrical package style.
EUROPEAN PART NUMBER
MPSA18G
MPSA18G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.2A. With a min DC current gain of 500, it's ideal for amplifier applications. This through-hole transistor has a max power dissipation of 0.625W and operates up to 150 °C.
45 V
500
160 MHz
MPSA18RLRMG
MPSA18RLRMG by Onsemi is a NPN BJT transistor with 500 min hFE, 45V VCEO, and 160MHz fT. Ideal for amplifier applications due to its 0.2A IC, 0.625W Pdiss, and cylindrical package style. Suitable for through-hole mounting with bottom terminal position.
MPSA56RLRPG
MPSA56RLRPG by Onsemi is a PNP BJT with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. power dissipation of 0.625W in a cylindrical package style.
MPSA56ZL1G
MPSA56ZL1G by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.5A, ideal for amplifier applications. It has a min. DC current gain of 100, operates up to 150 °C, and features a cylindrical package style for through-hole mounting.
MPSA70RLRMG
MPSA70RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for amplifier applications due to its cylindrical package style, it operates at up to 150 °C and has a nominal transition frequency of 125MHz.
40
125 MHz
MPSW05G
The Onsemi MPSW05G is a NPN BJT transistor with 60V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in a cylindrical shape with through-hole terminals for easy installation.
TO-226
MPSW51G
MPSW51G by Onsemi is a PNP BJT with 1W power dissipation, 30V max collector-emitter voltage, and 50MHz transition frequency. Ideal for low-power applications requiring high DC current gain in a cylindrical package with through-hole terminals.
30 V
MPSW51AG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;
MPSW51ARLRAG
MPSW51ARLRPG
MPSW51ARLRPG by Onsemi is a PNP BJT with 1W power dissipation, hFE of 50, and max. collector-emitter voltage of 40V. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and max. operating temp. of 150°C. Package style: cylindrical, terminals: through-hole with tin silver copper finish.
P2N2222AG
P2N2222AG by Onsemi is a NPN BJT with 3 terminals, max. power dissipation of 0.625W, and hFE of 75. Ideal for amplifier applications, it has a max. collector-emitter voltage of 40V and operates up to 150°C. With a transition frequency of 300MHz, it offers fast turn-on/off times for efficient performance.
.6 A
Tin/Silver/Copper (Sn/Ag/Cu)
300 MHz
285 ns
35 ns
P2N2222AZL1G
P2N2222AZL1G by Onsemi is a NPN BJT with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. Ideal for amplifier applications due to its max. collector-emitter voltage of 40V and nominal transition frequency of 300MHz.
PN2222G
PN2222G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 75, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (250MHz). Its through-hole package makes it suitable for various electronic designs.
1.5 W
250 MHz
PN2222ARLRMG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
PN2907ARLRAG
PN2907ARLRAG by Onsemi is a PNP BJT with hFE of 50, VCEO of 60V, and IC of 0.6A. Ideal for applications requiring high-speed switching such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: Tin Silver Copper.
200 MHz
100 ns
45 ns
PZT3906T1G
PZT3906T1G by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for small outline packages in applications requiring a high transition frequency up to 250MHz such as signal amplification in electronic circuits.
COLLECTOR
30
TO-261AA
R-PDSO-G4
e3
4
RECTANGULAR
SMALL OUTLINE
.3 W
YES
MATTE TIN
GULL WING
DUAL
300 ns
70 ns
DSS4140V-7
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;
R-PDSO-F6
6
.6 W
FLAT
DSS4220V-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 2 A;
2 A
20 V
120
-55 Cel
260 MHz
.35 V
DSS5140V-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;
160
STL72
STMicroelectronics
STL72 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 1W, and operates up to 150 °C. Ideal for various electronic circuits requiring reliable performance.
400 V
5
TIN
2SD2705STP
ROHM
ROHM's 2SD2705STP is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 820, and fT of 35MHz. Ideal for amplifier applications due to its single configuration and max. collector current of 0.3A at an operating temp of up to 150°C in a cylindrical package with through-hole terminals.
820
35 MHz
DRDN005W-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): 260;
R-PDSO-G6
DRDN010W-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified;
18 V
150
2N5400RLRPG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
120 V
.35 W
BC487BG
BC487BG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 60V, ideal for switching applications. It has a min. DC current gain of 160 and max. power dissipation of 0.625W, suitable for high-frequency operations up to 200MHz in cylindrical package style.
BC487G
BC487G by Onsemi is a NPN BJT transistor with hFE of 60, Vce of 60V, and fT of 200MHz. It is used for switching applications in electronics due to its single configuration and max collector current of 0.5A. The transistor comes in a cylindrical package with through-hole terminals made of silicon material.
BC488BRL1G
BC488BRL1G by Onsemi is a PNP BJT transistor with hFE of 15, VCE of 60V, and IC of 1A. Ideal for switching applications due to its high transition frequency of 150MHz. It comes in a cylindrical package with through-hole terminals for easy installation.
BC558CZL1G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 360 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .1 A;
420
360 MHz
MPS5172G
MPS5172G by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 100, and VCE of 25V. Ideal for low-power applications in electronics due to its small package size and high DC current gain.
MPS5172RLRMG
MPS5172RLRMG by Onsemi is a NPN BJT with hFE of 100, VCE of 25V, and IC of 0.1A. Ideal for low-power applications in electronics due to its small size and high reliability. Suitable for use in various circuits requiring a single NPN transistor configuration.
MPS8599RLRMG
MPS8599RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. operating temp of 150 °C. Ideal for amplifier applications due to its high transition frequency of 150MHz and max collector-emitter voltage of 80V in a cylindrical package shape.
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