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PN2222G

Onsemi

PN2222G by Onsemi

PN2222G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 75, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (250MHz). Its through-hole package makes it suitable for various electronic designs.

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AZTECH Wire

Italy . 403 parts In-Stock

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

USA . 28,607 parts In-Stock

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TANS Electronics

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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Overview

Looking for a reliable and high-quality solution for your switching applications? Look no further than the Onsemi PN2222G Small Signal Bipolar Junction Transistor. With a trusted manufacturer like Onsemi, you can count on top-notch performance and durability. This NPN transistor is perfect for various switching tasks, offering a maximum collector-emitter voltage of 30V and a minimum DC current gain of 75. Trust in the PN2222G to deliver exceptional results every time, making it a valuable asset for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile.

Configuration: SINGLE

Simplified design with only one transistor in the package.

Transistor Application: SWITCHING

Suitable for switching applications due to its fast turn on and turn off times.

Package Shape: ROUND

Compact and space-saving design.

Terminal Form: THROUGH-HOLE

Provides sturdy mounting and connection points.

Maximum Power Dissipation (Abs): 1.5 W

Can handle relatively high power levels.

Package Style (Meter): CYLINDRICAL

Easy to handle and install.

Minimum DC Current Gain (hFE): 75

Ensures reliable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can operate in potentially high-temperature environments.

Maximum Collector-Emitter Voltage: 30 V

Sufficient voltage rating for many common applications.

Transistor Element Material: SILICON

Highly common and reliable material for transistors.

Maximum Turn On Time (ton): 35 ns

Fast turn on time for swift switching operations.

Maximum Collector Current (IC): 0.6 A

Able to handle moderate current levels.

Maximum Turn Off Time (toff): 285 ns

Quick turn off time for efficient switching.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance.

Terminal Position: BOTTOM

Allows for easy and secure connections.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during the soldering process.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency for fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2222G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

PN2222G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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