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P2N2222AZL1G

Onsemi

P2N2222AZL1G by Onsemi

P2N2222AZL1G by Onsemi is a NPN BJT with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. Ideal for amplifier applications due to its max. collector-emitter voltage of 40V and nominal transition frequency of 300MHz.

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Lifecycle Status

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5

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1k+

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ComSIT Distribution GmbH

Germany . 25,485 parts In-Stock

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ComSIT USA

USA . 25,485 parts In-Stock

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Vyrian

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Digiode

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Nova Conductors

Japan . 10 parts In-Stock

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AZTECH Wire

Italy . 881 parts In-Stock

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$19.866

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Ampacity Inc.

Singapore . 359 parts In-Stock

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$35.050

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 6,218 parts In-Stock

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Kulean Microsystems

USA . 5,836 parts In-Stock

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Argo Parts USA

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TANS Electronics

Latvia . 1,614 parts In-Stock

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Corphita

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Corohmni

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Problanco Electronics

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UHIMA Technologies

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Overview

Enhance your electronic projects with the P2N2222AZL1G from Onsemi, a high-quality small signal bipolar junction transistor that delivers exceptional performance. Manufactured by Onsemi, a reputable industry leader known for its cutting-edge technology and reliability, this NPN transistor is ideal for amplifier applications. With a maximum power dissipation of 0.625W and a minimum DC current gain of 75, this transistor offers unmatched value and efficiency. Upgrade your designs with the P2N2222AZL1G and experience superior quality and functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

Compact round shape allows for easy mounting and installation in various applications.

No. of Terminals: 3

Simple design with 3 terminals for easy connection and integration into circuits.

Maximum Power Dissipation (Abs): 0.625 W

Capable of handling moderate power dissipation, suitable for various applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, ensuring reliability in various environments.

Maximum Collector-Emitter Voltage: 40 V

Can withstand relatively high collector-emitter voltage, suitable for many circuit designs.

Minimum DC Current Gain (hFE): 75

High DC current gain ensures efficient signal amplification in amplifier circuits.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics for the transistor element.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency ensures fast response and optimal performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2222AZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

P2N2222AZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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