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P2N2222ARL1G

Onsemi

P2N2222ARL1G by Onsemi

P2N2222ARL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. collector-emitter voltage of 40V. It is used in amplifier applications due to its high transition frequency of 300MHz and single configuration design for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 35,000 parts In-Stock

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35,000

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Vyrian

USA . 7,163 parts In-Stock

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Digiode

USA . 1,235 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Aztec Data Supply Inc.

USA . 3,493 parts In-Stock

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$0.790

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3,493

$0.790

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AZTECH Wire

Italy . 642 parts In-Stock

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$16.467

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642

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Ampacity Inc.

Singapore . 563 parts In-Stock

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$36.050

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563

$36.050

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Resion (Excess)

USA . 8,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,050 parts In-Stock

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Continental Prestige Electronics

USA . 5,956 parts In-Stock

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Kulean Microsystems

USA . 5,344 parts In-Stock

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Argo Parts USA

USA . 3,731 parts In-Stock

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Problanco Electronics

Mexico . 2,813 parts In-Stock

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SupplyDigital Components

Austria . 2,581 parts In-Stock

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Corphita

USA . 2,117 parts In-Stock

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UHIMA Technologies

Türkiye . 439 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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50

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TANS Electronics

Latvia . 36 parts In-Stock

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36

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Overview

Enhance your electronic projects with the P2N2222ARL1G by Onsemi – a top-quality Small Signal Bipolar Junction Transistor that promises reliable performance and durability. Manufactured by Onsemi, this NPN transistor is ideal for amplifier applications. With a maximum power dissipation of 0.625W and a high DC current gain of 75, this transistor offers exceptional value and benefits to customers looking for a versatile and efficient component for their designs. Trust Onsemi for quality and choose the P2N2222ARL1G for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal conductivity and high resistance to shock and vibration, making it durable and reliable.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, offering high efficiency and performance.

Configuration: SINGLE

Simplified circuit design and easy to use in various applications.

Transistor Application: AMPLIFIER

Well-suited for amplification of signals with low power dissipation and high efficiency.

Package Shape: ROUND

Compact and space-saving design, ideal for applications with limited space.

Terminal Form: THROUGH-HOLE

Easy to install and replace in through-hole PCBs, ensuring secure connections.

No. of Terminals: 3

Simplified connectivity and integration into circuits, reducing complexity and errors.

Maximum Power Dissipation (Abs): 0.625 W

Can handle higher power levels without overheating or damage, ensuring reliability and longevity.

Maximum Operating Temperature: 150 °C

Allows for operation in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

Can withstand higher voltage levels, providing versatility in various applications.

Transistor Element Material: SILICON

Offers high performance, efficiency, and durability, making it suitable for a wide range of applications.

Maximum Turn On Time (ton): 35 ns

Provides fast switching speed, allowing for quick response times in amplification and signal processing.

Maximum Collector Current (IC): 0.6 A

Capable of handling higher current levels, suitable for applications requiring amplification of higher currents.

Maximum Turn Off Time (toff): 285 ns

Ensures efficient switching off of the transistor, reducing power loss and improving overall performance.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Provides good conductivity and corrosion resistance, ensuring secure and long-lasting connections.

Terminal Position: BOTTOM

Facilitates easy soldering and installation, making it convenient for PCB assembly.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand high reflow temperatures for a short duration without compromising performance or integrity.

Peak Reflow Temperature °C: 260

Suitable for reflow soldering processes, ensuring proper and reliable solder joints.

Nominal Transition Frequency (fT): 300 MHz

Provides high-frequency performance, suitable for applications requiring signal amplification at higher frequencies.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2222ARL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

P2N2222ARL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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