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P2N2907ARL

Onsemi

P2N2907ARL by Onsemi

P2N2907ARL by Onsemi is a PNP BJT with hFE of 100, VCE of 60V, and fT of 200MHz. Ideal for amplifier applications due to its high gain and fast switching times. Packaged in cylindrical form with through-hole terminals for easy integration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,089 parts In-Stock

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Digiode

USA . 1,109 parts In-Stock

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Kulean Microsystems

USA . 7,765 parts In-Stock

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SupplyDigital Components

Austria . 4,650 parts In-Stock

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TANS Electronics

Latvia . 1,615 parts In-Stock

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Problanco Electronics

Mexico . 1,348 parts In-Stock

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UHIMA Technologies

Türkiye . 770 parts In-Stock

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770

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Corohmni

South Africa . 185 parts In-Stock

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Corphita

USA . 77 parts In-Stock

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor (BJT)? Look no further than the P2N2907ARL by Onsemi. With a proven track record of excellence, Onsemi delivers top-notch products that meet the highest industry standards. The P2N2907ARL is perfect for amplifier applications with its PNP configuration and impressive specifications. Trust Onsemi to provide you with a superior product that offers exceptional value, benefits, and advantages to meet all your needs. Choose the P2N2907ARL for unparalleled performance and reliability in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor well-suited for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making the transistor easy to use.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in amplifier circuits.

Package Shape: ROUND

Compact package size allows for easy integration into circuits with limited space.

Terminal Form: THROUGH-HOLE

Enables easy soldering and secure connection to circuit boards.

No. of Terminals: 3

Simple 3-terminal design for straightforward circuit connections.

Package Style (Meter): CYLINDRICAL

Cylindrical package design enhances thermal performance and allows for efficient heat dissipation.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures strong signal amplification in the circuit.

Maximum Operating Temperature: 150 °C

Operates reliably at high temperatures, suitable for various industrial applications.

Maximum Collector-Emitter Voltage: 60 V

Can handle relatively high voltages, making it versatile for different circuit configurations.

Transistor Element Material: SILICON

Silicon material ensures reliable performance and durability of the transistor.

Maximum Turn On Time (ton): 50 ns

Fast turn-on time enables rapid switching and minimizes signal delay.

Maximum Collector Current (IC): 0.6 A

Adequate collector current capacity for medium power applications, ensuring stable operation.

Maximum Turn Off Time (toff): 110 ns

Fast turn-off time enhances switching efficiency and minimizes power loss.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easier mounting and soldering on circuit boards.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for high-speed signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2907ARL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

110 ns

Maximum Turn On Time (ton):

50 ns

Trade Compliance

P2N2907ARL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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