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P2N2222ARL

Onsemi

P2N2222ARL by Onsemi

P2N2222ARL by Onsemi is a NPN BJT transistor with hFE of 75, Vce of 40V, and fT of 300MHz. Ideal for amplifier applications due to its high transition frequency and collector current capacity of 0.6A. Its through-hole package makes it suitable for various electronic designs requiring reliable performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,018 parts In-Stock

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Vyrian

USA . 845 parts In-Stock

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ECAB

Sweden . 500 parts In-Stock

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SupplyDigital Components

Austria . 8,329 parts In-Stock

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Kulean Microsystems

USA . 6,528 parts In-Stock

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TANS Electronics

Latvia . 3,165 parts In-Stock

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Problanco Electronics

Mexico . 2,201 parts In-Stock

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UHIMA Technologies

Türkiye . 957 parts In-Stock

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Corohmni

South Africa . 145 parts In-Stock

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Corphita

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Overview

Upgrade your electronic projects with the high-quality P2N2222ARL small signal bipolar junction transistor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and durable components for various applications, including amplifiers. The NPN configuration and 40V maximum collector-emitter voltage of this transistor ensure optimal performance. Trust Onsemi to provide you with a product that offers value, efficiency, and unmatched benefits for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in various devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and easy soldering for circuit integration.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and functionality.

Minimum DC Current Gain (hFE): 75

A minimum DC current gain of 75 ensures reliable amplification and signal processing.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage of 40V allows for versatile use in different voltage applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making this product a trustworthy choice.

Maximum Turn On Time (ton): 35 ns

The fast turn-on time of 35 nanoseconds ensures quick response and efficient operation in time-sensitive applications.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6A, this transistor can handle moderate current loads in various circuits.

Maximum Turn Off Time (toff): 285 ns

The maximum turn-off time of 285 nanoseconds ensures a smooth transition and minimal switching losses in the circuit.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides corrosion resistance and ensures a reliable electrical connection.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and enables efficient heat dissipation.

Nominal Transition Frequency (fT): 300 MHz

A high nominal transition frequency of 300 MHz allows for high-speed signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2222ARL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

P2N2222ARL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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