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P2N2222ARLRP

Onsemi

P2N2222ARLRP by Onsemi

P2N2222ARLRP by Onsemi is a NPN BJT transistor with hFE of 75, Vce of 40V, and fT of 300MHz. It is used in amplifier applications due to its single configuration and through-hole terminals. Operating at up to 150 °C, it offers fast turn-on time (ton) of 35ns and low collector current (IC) of 0.6A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,489 parts In-Stock

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Vyrian

USA . 166 parts In-Stock

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TANS Electronics

Latvia . 8,054 parts In-Stock

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Problanco Electronics

Mexico . 5,298 parts In-Stock

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Kulean Microsystems

USA . 4,606 parts In-Stock

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Corphita

USA . 2,025 parts In-Stock

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SupplyDigital Components

Austria . 1,140 parts In-Stock

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UHIMA Technologies

Türkiye . 723 parts In-Stock

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Corohmni

South Africa . 174 parts In-Stock

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Overview

Enhance your electronic projects with the reliable P2N2222ARLRP Small Signal Bipolar Junction Transistor by Onsemi. Manufactured with high-quality materials and advanced technology, this NPN transistor is perfect for amplifier applications. Its superior performance, with a DC current gain of 75 and a maximum operating temperature of 150 °C, ensures optimal functionality. With a collector-emitter voltage of 40V and a transition frequency of 300 MHz, this transistor provides unmatched value and efficiency. Trust Onsemi for top-notch components that deliver exceptional results in all your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for amplifier applications

Minimum DC Current Gain (hFE): 75

High hFE value ensures efficient amplification of signals in amplifier circuits

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, ensuring reliability in demanding environments

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications where a moderate voltage handling capability is required

Maximum Collector Current (IC): 0.6 A

Able to handle moderate current levels, making it suitable for various amplifier applications

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for efficient signal amplification at high frequencies

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2222ARLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

P2N2222ARLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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