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P2N2222ARL1

Onsemi

P2N2222ARL1 by Onsemi

P2N2222ARL1 by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. collector-emitter voltage of 40V. Ideal for amplifier applications due to its high transition frequency of 300MHz and low turn on/off times (35ns/285ns).

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 28,000 parts In-Stock

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Vyrian

USA . 2,211 parts In-Stock

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Digiode

USA . 1,229 parts In-Stock

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1,229

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Nova Conductors

Japan . 1,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 577 parts In-Stock

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577

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EMSNET

USA . 40 parts In-Stock

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40

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Aztec Data Supply Inc.

USA . 2,341 parts In-Stock

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$0.820

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2,341

$0.820

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AZTECH Wire

Italy . 226 parts In-Stock

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$13.953

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226

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Ampacity Inc.

Singapore . 877 parts In-Stock

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$61.050

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877

$61.050

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Problanco Electronics

Mexico . 8,380 parts In-Stock

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TANS Electronics

Latvia . 7,312 parts In-Stock

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SupplyDigital Components

Austria . 5,539 parts In-Stock

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Argo Parts USA

USA . 4,343 parts In-Stock

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Continental Prestige Electronics

USA . 4,281 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 1,679 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,577 parts In-Stock

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Corphita

USA . 982 parts In-Stock

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Glotronic Ltd.

UK . 462 parts In-Stock

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462

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UHIMA Technologies

Türkiye . 445 parts In-Stock

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Corohmni

South Africa . 350 parts In-Stock

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350

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Discover the power of high-quality Small Signal Bipolar Junction Transistors with the P2N2222ARL1 by Onsemi. Manufactured by a trusted industry leader, this NPN transistor offers reliable performance for amplifier applications. With a maximum power dissipation of 0.625 W and a minimum DC current gain of 75, this transistor delivers superior results. Trust in the durability and efficiency of Onsemi products to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it versatile for various applications.

Configuration: SINGLE

Simplified design for easy integration into circuitry.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio and signal processing.

Package Shape: ROUND

Compact and space-saving form factor for efficient PCB layout.

Terminal Form: THROUGH-HOLE

Easy to solder and mount on circuit boards.

Maximum Power Dissipation (Abs): 0.625 W

Can handle high power levels without overheating, ensuring reliable operation.

Package Style (Meter): CYLINDRICAL

Easily adaptable for various applications and mounting configurations.

Minimum DC Current Gain (hFE): 75

Ensures stable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low-voltage applications, providing protection against voltage spikes.

Transistor Element Material: SILICON

Offers high reliability and performance compared to other materials.

Maximum Turn On Time (ton): 35 ns

Fast switching speed for quick response in signal processing.

Maximum Collector Current (IC): 0.6 A

Can handle moderate current levels for most amplification applications.

Maximum Turn Off Time (toff): 285 ns

Fast turn-off time for efficient signal processing and amplification.

Terminal Finish: TIN LEAD

Good solderability and conductivity for reliable connections.

Terminal Position: BOTTOM

Easy to mount and solder on PCBs.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during soldering and reflow processes.

Nominal Transition Frequency (fT): 300 MHz

High frequency capability for amplification of fast-changing signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2222ARL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

P2N2222ARL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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