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P2N2907ARL1G

Onsemi

P2N2907ARL1G by Onsemi

P2N2907ARL1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 0.625W, and hFE of 100. Ideal for amplifier applications, it has a max. collector-emitter voltage of 60V and operates up to 150 °C. With a transition frequency of 200MHz, it offers fast turn-on/off times of 50ns/110ns.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 6,689 parts In-Stock

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SupplyDigital Components

Austria . 2,851 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,708 parts In-Stock

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Kulean Microsystems

USA . 2,645 parts In-Stock

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Problanco Electronics

Mexico . 1,763 parts In-Stock

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Corphita

USA . 1,723 parts In-Stock

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UHIMA Technologies

Türkiye . 606 parts In-Stock

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Corohmni

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Overview

Unlock the potential of your electronic projects with the P2N2907ARL1G by Onsemi. Crafted with precision and quality in mind, this Small Signal Bipolar Junction Transistor offers reliability and performance like no other. Ideal for amplifier applications, this PNP transistor boasts a maximum collector-emitter voltage of 60V and a minimum DC current gain of 100. With a maximum operating temperature of 150 °C, this transistor is designed to deliver superior results under various conditions. Experience the difference that Onsemi brings to the table and take your projects to new heights with the P2N2907ARL1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the transistor durable and resistant to external factors, ensuring long-term reliability.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits and provides efficient performance as an amplifier.

Configuration: SINGLE

The single configuration simplifies the design and implementation of circuits, making it suitable for various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high performance and reliability in amplification tasks.

Maximum Power Dissipation (Abs): 0.625 W

With a relatively high maximum power dissipation, this transistor can handle moderate power levels without overheating or damage.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating allows for safe operation in circuits with higher voltage levels.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency enables the transistor to be used in high-frequency applications, making it versatile in different amplifier setups.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2907ARL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

110 ns

Maximum Turn On Time (ton):

50 ns

Trade Compliance

P2N2907ARL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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