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P2N2222A

Onsemi

P2N2222A by Onsemi

P2N2222A by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and fT of 300MHz. With a max operating temp of 150°C and Vce of 40V, it offers fast turn-on/off times for efficient performance.

Median Price

$0.980

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 16 parts In-Stock

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Vyrian

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ABC Electronics Ltd.

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Martec Srl

Italy . 1,448 parts In-Stock

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Digiode

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Prism Electronics

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Connector Distribution Corp

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Right Parts Inc.

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J2 Sourcing AB

Sweden . 177 parts In-Stock

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ComSIT Distribution GmbH

Germany . 146 parts In-Stock

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ComSIT USA

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Semtec, LLC

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Nova Conductors

Japan . 67 parts In-Stock

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ECAB

Sweden . 54 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 11 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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AZTECH Wire

Italy . 634 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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SupplyDigital Components

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Argo Parts USA

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Corphita

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Perfect Parts

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Problanco Electronics

Mexico . 1,450 parts In-Stock

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Continental Prestige Electronics

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UHIMA Technologies

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Bastille Electronics

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TANS Electronics

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Overview

Enhance your electronic projects with the P2N2222A by Onsemi! As a leading manufacturer in the industry, Onsemi ensures top-quality components for small signal BJT applications like amplifiers. The NPN configuration and high DC current gain make this transistor ideal for a wide range of projects. With a maximum operating temperature of 150°C and a collector-emitter voltage of 40V, the P2N2222A offers reliability and durability. Trust Onsemi for superior performance and innovation in electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, suitable for various applications where portability is important.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product a versatile choice for audio applications.

Configuration: SINGLE

Simplifies circuit design and connections, making it easier to integrate into existing systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in audio or signal processing circuits.

Package Shape: ROUND

Compact and space-saving design, ideal for applications where space is limited.

Terminal Form: THROUGH-HOLE

Ease of installation and soldering onto circuit boards or prototypes.

No. of Terminals: 3

Straightforward and simple to connect, reducing the chances of errors during installation.

Maximum Power Dissipation (Abs): 0.625 W

Capable of handling moderate power levels, suitable for small signal amplification tasks.

Package Style (Meter): CYLINDRICAL

Aesthetic appeal and ease of handling, making it a visually pleasing option for projects.

Minimum DC Current Gain (hFE): 75

High current gain ensures stable amplification and reliable performance in various applications.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications requiring higher voltage handling capabilities, ensuring safety and reliability.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable choice for long-term use.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time ensures quick response in switching applications, improving overall system efficiency.

Maximum Collector Current (IC): 0.6 A

Capable of handling moderate current levels, suitable for small signal applications without overheating.

Maximum Turn Off Time (toff): 285 ns

Fast turn-off time prevents signal distortion and improves overall circuit efficiency.

Terminal Finish: TIN LEAD

Reliable and durable terminal finish, ensuring secure connections and longevity in various environments.

Terminal Position: BOTTOM

Easy to mount and solder on the PCB, simplifying the assembly process for circuit designers.

Peak Reflow Temperature °C: 235

Can withstand high-temperature soldering processes, ensuring proper bonding and reliability during manufacturing.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for efficient signal processing and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2222A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

P2N2222A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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