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P2N2222AZL1

Onsemi

P2N2222AZL1 by Onsemi

P2N2222AZL1 by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and fT of 300MHz. Ideal for amplifier applications due to its max. collector-emitter voltage of 40V and single configuration design. Package style is cylindrical with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 1,800 parts In-Stock

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ComSIT USA

USA . 1,800 parts In-Stock

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Digiode

USA . 1,746 parts In-Stock

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Vyrian

USA . 420 parts In-Stock

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Nova Conductors

Japan . 35 parts In-Stock

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35

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AZTECH Wire

Italy . 420 parts In-Stock

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$12.328

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Ampacity Inc.

Singapore . 999 parts In-Stock

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$20.050

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Component Stockers USA

USA . 317 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 24,750 parts In-Stock

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Problanco Electronics

Mexico . 5,895 parts In-Stock

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TANS Electronics

Latvia . 5,273 parts In-Stock

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Kulean Microsystems

USA . 2,972 parts In-Stock

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SupplyDigital Components

Austria . 2,159 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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UHIMA Technologies

Türkiye . 824 parts In-Stock

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Corohmni

South Africa . 435 parts In-Stock

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Corphita

USA . 309 parts In-Stock

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Overview

Enhance your electronic projects with the P2N2222AZL1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that delivers outstanding performance in amplifier applications. With a reliable manufacturer like Onsemi behind it, this NPN transistor boasts a single configuration and a maximum power dissipation of 0.625 W, making it a versatile choice for various projects. Its silicon element material ensures durability, while its fast turn on/off times and high transition frequency of 300 MHz provide efficiency and precision. Trust the P2N2222AZL1 to bring value and reliability to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that protects the transistor from damage and ensures long-lasting performance.

Polarity or Channel Type: NPN

Common type of bipolar junction transistor that is widely used for various applications, providing compatibility with a wide range of circuits.

Configuration: SINGLE

Simplified design with a single transistor, making it easier to incorporate into circuits and reducing complexity.

Transistor Application: AMPLIFIER

Specifically designed for amplification, ensuring optimal performance in audio and other signal amplification applications.

Package Shape: ROUND

Space-efficient shape that allows for easy installation and integration into circuit layouts.

No. of Terminals: 3

Simple design with fewer terminals, making it easier to connect in circuits and reducing chances of error.

Maximum Power Dissipation (Abs): 0.625 W

High power dissipation capability, allowing the transistor to handle larger loads and operate efficiently.

Package Style (Meter): CYLINDRICAL

Compact and space-saving package style that is ideal for small signal applications where space is limited.

Minimum DC Current Gain (hFE): 75

High minimum DC current gain ensures stable and consistent amplification of signals, providing reliable performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function effectively in various environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

High voltage tolerance ensures the transistor can handle higher voltage levels without damage, making it suitable for various applications.

Transistor Element Material: SILICON

Silicon material offers high performance, stability, and reliability, ensuring consistent operation over time.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time allows for quick switching and response in circuits, improving overall performance.

Maximum Collector Current (IC): 0.6 A

High collector current rating enables the transistor to handle larger current loads and provide sufficient amplification.

Maximum Turn Off Time (toff): 285 ns

Quick turn-off time ensures minimal lag and distortion in signal transmission, improving overall signal quality.

Terminal Finish: TIN LEAD

Tin lead finish provides good connectivity and solderability, ensuring secure connections in circuits.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount and solder the transistor onto circuit boards, simplifying installation.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for reliable soldering during assembly, ensuring durability and long-term performance.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for efficient signal amplification at higher frequencies, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2222AZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

P2N2222AZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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