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P2N2222ARLRM

Onsemi

P2N2222ARLRM by Onsemi

P2N2222ARLRM by Onsemi is a NPN BJT transistor with hFE of 75, Vce of 40V, and fT of 300MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates at max temp of 150 °C with quick turn-on time (ton) of 35ns.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 490 parts In-Stock

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Digiode

USA . 473 parts In-Stock

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473

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Kulean Microsystems

USA . 7,399 parts In-Stock

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TANS Electronics

Latvia . 7,286 parts In-Stock

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SupplyDigital Components

Austria . 5,760 parts In-Stock

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Problanco Electronics

Mexico . 3,517 parts In-Stock

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Corphita

USA . 1,061 parts In-Stock

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UHIMA Technologies

Türkiye . 548 parts In-Stock

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Corohmni

South Africa . 406 parts In-Stock

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Overview

Enhance your electronic projects with the P2N2222ARLRM from Onsemi, a high-quality Small Signal Bipolar Junction Transistor that guarantees reliable performance. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for amplifier applications, offering a minimum DC current gain of 75 and a maximum operating temperature of 150 °C. With its quick turn-on time and high collector current capacity, this transistor is designed to deliver exceptional results. Upgrade your circuits today and experience the value and benefits that the P2N2222ARLRM brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, suitable for a wide range of applications.

Configuration: SINGLE

Simplifies the circuit design and makes the transistor easy to integrate into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio and signal processing applications.

Package Shape: ROUND

Compact design that allows for easy mounting and alignment in circuit boards.

Terminal Form: THROUGH-HOLE

Provides a secure connection to the circuit board and simplifies soldering during assembly.

Maximum Operating Temperature: 150 °C

Can operate reliably in a wide range of temperature conditions, making it suitable for various environments.

Maximum Collector-Emitter Voltage: 40 V

Allows for high voltage handling capabilities, making it versatile in different circuit configurations.

Maximum Collector Current (IC): 0.6 A

Offers high collector current rating, suitable for applications requiring higher power output.

Nominal Transition Frequency (fT): 300 MHz

Provides high-frequency response, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2222ARLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

P2N2222ARLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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