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P2N2222AG

Onsemi

P2N2222AG by Onsemi

P2N2222AG by Onsemi is a NPN BJT with 3 terminals, max. power dissipation of 0.625W, and hFE of 75. Ideal for amplifier applications, it has a max. collector-emitter voltage of 40V and operates up to 150°C. With a transition frequency of 300MHz, it offers fast turn-on/off times for efficient performance.

Median Price

$0.074

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

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$0.074

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300

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Chip Stock

USA . 55,000 parts In-Stock

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Vyrian

USA . 6,627 parts In-Stock

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Digiode

USA . 2,381 parts In-Stock

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J2 Sourcing AB

Sweden . 147 parts In-Stock

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QIE Inc.

USA . 64 parts In-Stock

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64

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North Shore Components

USA . 24 parts In-Stock

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Component Electronics Inc.

Canada . 18 parts In-Stock

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NexGen Digital

USA . 1 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 180 parts In-Stock

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$0.071

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180

$0.071

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Continental Prestige Electronics

USA . 4,656 parts In-Stock

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$0.074

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$0.073

4,656

$0.074

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$0.073

Argo Parts USA

USA . 4,282 parts In-Stock

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$0.074

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$0.072

4,282

$0.074

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$0.072

Aztec Data Supply Inc.

USA . 1,673 parts In-Stock

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$1.732

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$1.732

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AZTECH Wire

Italy . 631 parts In-Stock

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$5.398

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631

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Ampacity Inc.

Singapore . 436 parts In-Stock

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$42.050

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436

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Semicontronic

India . 725 parts In-Stock

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$57.050

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$55.624

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$55.338

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725

$57.050

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Component Stockers USA

USA . 367 parts In-Stock

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$99.990

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Perfect Parts

USA . 192,910 parts In-Stock

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TANS Electronics

Latvia . 7,332 parts In-Stock

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Lixinc

USA . 6,021 parts In-Stock

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SupplyDigital Components

Austria . 5,268 parts In-Stock

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Metaverse IC Inc.

Canada . 4,099 parts In-Stock

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Problanco Electronics

Mexico . 1,758 parts In-Stock

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Kulean Microsystems

USA . 1,191 parts In-Stock

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Corphita

USA . 941 parts In-Stock

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UHIMA Technologies

Türkiye . 587 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.073

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$0.070

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$0.069

100

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$0.070

$0.069

Kepictronics

USA . 100 parts In-Stock

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100

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Giza Technologies, Inc.

USA . 100 parts In-Stock

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100

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Overview

Enhance the performance of your electronic designs with the P2N2222AG from Onsemi, a leading manufacturer known for its high-quality components. As part of the Small Signal Bipolar Junction Transistors (BJT) category, this NPN transistor is perfect for amplifier applications. With a maximum power dissipation of 0.625 W and a minimum DC current gain of 75, this transistor offers reliable and efficient operation. Trust in the superior quality and advanced technology of Onsemi to bring value and benefits to your projects. Upgrade your designs today with the P2N2222AG and experience enhanced performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Simplified design with single configuration makes it easier to implement in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Power Dissipation (Abs): 0.625 W

Capable of handling high power dissipation, making it reliable for demanding applications.

Minimum DC Current Gain (hFE): 75

High DC current gain ensures efficient amplification of signals.

Maximum Collector-Emitter Voltage: 40 V

With a high collector-emitter voltage, this transistor can handle higher voltages in the circuit.

Maximum Collector Current (IC): 0.6 A

Capable of handling high collector current, making it suitable for applications requiring high current amplification.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for high-speed switching and amplification of signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2222AG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

P2N2222AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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