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P2N2907A

Onsemi

P2N2907A by Onsemi

P2N2907A by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 60V, hFE of 100, and max. power dissipation of 0.625W. Ideal for amplifier applications due to its high transition frequency of 200MHz and single configuration design. Package style is cylindrical with through-hole terminals.

Median Price

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Lifecycle Status

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ACDS - Activité Composants Distribution Service

France . 2,874 parts In-Stock

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Mentor Electronics Marketing, LLC

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ComSIT Distribution GmbH

Germany . 900 parts In-Stock

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Vyrian

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R&J Components

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ECAB

Sweden . 250 parts In-Stock

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Digiode

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Zilex Electronics Inc.

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Prism Electronics

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QUARKTWIN TECHNOLOGY LTD

USA . 21,447 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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TANS Electronics

Latvia . 1,380 parts In-Stock

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SupplyDigital Components

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Corphita

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Overview

Enhance your electronic projects with the high-quality P2N2907A by Onsemi! As a leading manufacturer in small signal bipolar junction transistors, Onsemi ensures reliability and precision in every product. The P2N2907A is ideal for amplifier applications, providing exceptional performance with a maximum collector-emitter voltage of 60V and a DC current gain of 100. With a maximum power dissipation of 0.625W and a fast turn on/off time, this PNP transistor offers unmatched value and efficiency for your circuit designs. Upgrade your projects today with the P2N2907A from Onsemi!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require PNP transistors, expanding the versatility of the product.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easy implementation.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and placement within a circuit.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure connections and ease of soldering.

No. of Terminals: 3

With 3 terminals, the transistor is versatile and can be easily integrated into various circuit configurations.

Maximum Power Dissipation: 0.625 W

With a maximum power dissipation of 0.625W, the transistor can handle moderate power levels effectively.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor, suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 100

The minimum DC current gain of 100 ensures reliable amplification capabilities.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 60 V

The maximum collector-emitter voltage of 60V allows for compatibility with higher voltage circuits.

Transistor Element Material: SILICON

The silicon transistor element material provides reliable performance and durability.

Maximum Turn On Time (ton): 50 ns

With a maximum turn-on time of 50ns, the transistor switches quickly, enhancing overall circuit efficiency.

Maximum Collector Current (IC): 0.6 A

The maximum collector current of 0.6A enables the transistor to handle moderate current loads.

Maximum Turn Off Time (toff): 110 ns

With a maximum turn-off time of 110ns, the transistor switches off swiftly, reducing switching losses.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides reliable solder connections for long-term durability.

Terminal Position: BOTTOM

The bottom terminal position allows for easier PCB mounting and soldering.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30s, the transistor can withstand reflow soldering processes effectively.

Peak Reflow Temperature °C: 235

The peak reflow temperature of 235 °C ensures proper soldering without damaging the transistor.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200MHz, the transistor is capable of high-speed switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) P2N2907A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

110 ns

Maximum Turn On Time (ton):

50 ns

Trade Compliance

P2N2907A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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