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MPS6727G

Onsemi

MPS6727G by Onsemi

MPS6727G by Onsemi is a PNP BJT with 1W power dissipation, 40V max. collector-emitter voltage, and 50MHz transition frequency. Ideal for amplifier applications due to its single configuration and through-hole terminal form in a cylindrical package style.

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Vyrian

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Digiode

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AZTECH Wire

Italy . 700 parts In-Stock

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$16.120

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QUARKTWIN TECHNOLOGY LTD

USA . 6,563 parts In-Stock

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SupplyDigital Components

Austria . 6,003 parts In-Stock

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Kulean Microsystems

USA . 5,017 parts In-Stock

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TANS Electronics

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Problanco Electronics

Mexico . 1,398 parts In-Stock

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Corphita

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UHIMA Technologies

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Overview

Enhance your electronic projects with the MPS6727G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their superior products, this PNP transistor offers reliable performance in amplifier applications. With a maximum power dissipation of 1W and a minimum DC current gain of 50, this transistor ensures efficiency and stability. Its through-hole terminals and cylindrical package make it easy to integrate into your designs. Experience the value and benefits of choosing Onsemi's MPS6727G for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits requiring PNP transistors, making it versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easy to use in single-transistor amplifier setups.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

The round shape of the package provides efficient thermal dissipation and easy mounting in circular layouts.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy soldering and secure connections in circuit boards.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle high-power amplifier applications without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides compactness and ease of mounting in tight spaces or on PCBs.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor ensures sufficient gain for amplification while minimizing distortion.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can handle high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

The maximum collector-emitter voltage of 40 V allows for safe operation in circuits with varying voltage levels.

Transistor Element Material: SILICON

Silicon material provides reliability, high performance, and compatibility with common semiconductor processes.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle moderate to high current levels in amplifier circuits.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin silver copper ensures good conductivity, corrosion resistance, and solderability for reliable connections.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and allows for efficient heat dissipation through the board.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures secure soldering during assembly processes.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50 MHz, this transistor is suitable for high-frequency signal amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6727G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6727G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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