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MPS6729G

Onsemi

MPS6729G by Onsemi

MPS6729G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 1W, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its single configuration and silicon element material, operating at up to 150 °C with a min DC current gain of 50 (hFE).

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,902 parts In-Stock

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Digiode

USA . 1,862 parts In-Stock

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AZTECH Wire

Italy . 553 parts In-Stock

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$16.870

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Component Stockers USA

USA . 371 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 20,210 parts In-Stock

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Problanco Electronics

Mexico . 7,797 parts In-Stock

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Kulean Microsystems

USA . 5,291 parts In-Stock

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TANS Electronics

Latvia . 5,134 parts In-Stock

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SupplyDigital Components

Austria . 4,337 parts In-Stock

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Corphita

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Corohmni

South Africa . 391 parts In-Stock

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UHIMA Technologies

Türkiye . 383 parts In-Stock

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Overview

Elevate your electronic designs with the Onsemi MPS6729G Small Signal Bipolar Junction Transistor. Crafted with precision by industry-leading manufacturer Onsemi, this PNP transistor offers unparalleled performance and reliability for amplifier applications. With a maximum collector-emitter voltage of 80V and a maximum power dissipation of 1W, this transistor delivers exceptional quality and efficiency. Explore the endless possibilities and unlock the full potential of your projects with the MPS6729G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to use in amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

Compact and space-saving design, suitable for applications where space is limited.

No. of Terminals: 3

Provides necessary connections for the transistor to function effectively in amplifier circuits.

Maximum Power Dissipation (Abs): 1 W

Can handle a decent amount of power, making it suitable for medium-power amplifier applications.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, ensuring stable performance in various environments.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications where higher voltage handling capability is required.

Minimum DC Current Gain (hFE): 50

Ensures proper amplification in amplifier circuits, providing consistent and reliable performance.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels, suitable for many amplifier applications.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering processes, ensuring proper assembly and reliability.

Nominal Transition Frequency (fT): 50 MHz

Provides good frequency response, making it suitable for amplification of signals up to 50 MHz.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6729G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6729G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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