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MPSW51ARLRPG

Onsemi

MPSW51ARLRPG by Onsemi

MPSW51ARLRPG by Onsemi is a PNP BJT with 1W power dissipation, hFE of 50, and max. collector-emitter voltage of 40V. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and max. operating temp. of 150°C. Package style: cylindrical, terminals: through-hole with tin silver copper finish.

Median Price

$0.107

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

1+ parts

$0.064

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1

$0.064

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Rochester

USA . 6,234 parts In-Stock

1+ parts

$0.150

100+ parts

$0.150

1k+ parts

$0.140

10k+ parts

-

6,234

$0.150

$0.150

$0.140

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Distributors (In-Stock)

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Digiode

USA . 592 parts In-Stock

1+ parts

$0.061

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-

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592

$0.061

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Nova Conductors

Japan . 550 parts In-Stock

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$0.155

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550

$0.155

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Vyrian

USA . 3,757 parts In-Stock

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3,757

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Distributors (Availability)

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Ampacity Inc.

Singapore . 81 parts In-Stock

1+ parts

$0.054

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81

$0.054

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Corphita

USA . 2,295 parts In-Stock

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$0.058

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2,295

$0.058

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Corohmni

South Africa . 241 parts In-Stock

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$0.064

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241

$0.064

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AZTECH Wire

Italy . 406 parts In-Stock

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$9.090

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406

$9.090

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TANS Electronics

Latvia . 7,743 parts In-Stock

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Kulean Microsystems

USA . 6,737 parts In-Stock

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Perfect Parts

USA . 6,378 parts In-Stock

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SupplyDigital Components

Austria . 4,974 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,621 parts In-Stock

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Problanco Electronics

Mexico . 3,483 parts In-Stock

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3,483

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Continental Prestige Electronics

USA . 1,140 parts In-Stock

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$0.157

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$0.157

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UHIMA Technologies

Türkiye . 913 parts In-Stock

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913

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Netroflash

USA . 100 parts In-Stock

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$0.152

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$0.147

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$0.144

100

-

$0.152

$0.147

$0.144

Overview

Unlock the potential of your electronic projects with the MPSW51ARLRPG by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for a wide range of applications. With a maximum collector-emitter voltage of 40V and a maximum collector current of 1A, this transistor provides exceptional power dissipation and efficiency. Upgrade your circuits today with the MPSW51ARLRPG and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Package Shape: ROUND

Compact and space-saving design, ideal for applications with limited space.

Maximum Power Dissipation (Abs): 1 W

Capable of handling high power dissipation, making it suitable for various applications.

Package Style (Meter): CYLINDRICAL

Easy to handle and install due to its cylindrical shape.

Minimum DC Current Gain (hFE): 50

Provides consistent amplification in circuits, ensuring reliable performance.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without risking damage to the transistor.

Maximum Collector-Emitter Voltage: 40 V

Ability to withstand high collector-emitter voltages, suitable for a range of applications.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other transistor materials.

Maximum Collector Current (IC): 1 A

Capable of handling high collector currents, making it suitable for power applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and soldering of the transistor.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Nominal Transition Frequency (fT): 50 MHz

Suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW51ARLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-226

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW51ARLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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