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PN2907ARLRAG

Onsemi

PN2907ARLRAG by Onsemi

PN2907ARLRAG by Onsemi is a PNP BJT with hFE of 50, VCEO of 60V, and IC of 0.6A. Ideal for applications requiring high-speed switching such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: Tin Silver Copper.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 10,000 parts In-Stock

1+ parts

$0.225

100+ parts

$0.113

1k+ parts

$0.045

10k+ parts

$0.028

10,000

$0.225

$0.113

$0.045

$0.028

Vyrian

USA . 3,659 parts In-Stock

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Digiode

USA . 1,271 parts In-Stock

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1,271

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Distributors (Availability)

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AZTECH Wire

Italy . 649 parts In-Stock

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$14.250

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649

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Perfect Parts

USA . 14,487 parts In-Stock

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14,487

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TANS Electronics

Latvia . 6,651 parts In-Stock

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SupplyDigital Components

Austria . 6,641 parts In-Stock

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Problanco Electronics

Mexico . 6,038 parts In-Stock

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Kulean Microsystems

USA . 5,905 parts In-Stock

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UHIMA Technologies

Türkiye . 502 parts In-Stock

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502

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Corohmni

South Africa . 162 parts In-Stock

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Corphita

USA . 128 parts In-Stock

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Overview

Enhance your product design with the PN2907ARLRAG by Onsemi, a high-quality PNP bipolar junction transistor that offers unmatched reliability and performance. Manufactured by Onsemi, a leading name in semiconductor technology, this small signal BJT is perfect for a wide range of applications. With a maximum collector-emitter voltage of 60V and a DC current gain of 50, this transistor provides exceptional value and versatility. Trust Onsemi to deliver cutting-edge components that will take your project to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor components, ensuring durability and long lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in low-power applications and are easy to use in circuits, making this product versatile for various projects.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to implement in applications requiring a single transistor.

Package Shape: ROUND

The round shape of the package allows for easy mounting and placement in circuits, providing flexibility in design.

Maximum Power Dissipation: 0.625 W

With a high maximum power dissipation, this transistor can handle a range of power levels and is suitable for many different applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliability and stability even in harsh environments or under heavy load.

Maximum Collector-Emitter Voltage: 60 V

The high maximum voltage rating allows for use in a variety of circuit configurations without risk of damage from overvoltage.

Nominal Transition Frequency: 200 MHz

With a high transition frequency, this transistor is suitable for high-frequency applications and can provide fast switching performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2907ARLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

PN2907ARLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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