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PN2907A-AP

STMicroelectronics

PN2907A-AP by STMicroelectronics

PN2907A-AP by STMicroelectronics is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.5W, hFE of 50, and fT of 200MHz. Ideal for switching applications due to its max collector-emitter voltage of 60V and max collector current of 0.6A.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.030

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-

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500

$0.030

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Digiode

USA . 4,459 parts In-Stock

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4,459

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Anansix

USA . 1,105 parts In-Stock

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1,105

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Vyrian

USA . 889 parts In-Stock

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-

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889

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,083 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

-

10k+ parts

$0.029

3,083

$0.030

-

-

$0.029

Argo Parts USA

USA . 918 parts In-Stock

1+ parts

$0.030

100+ parts

-

1k+ parts

-

10k+ parts

$0.029

918

$0.030

-

-

$0.029

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.031

100+ parts

$0.031

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$0.031

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-

350

$0.031

$0.031

$0.031

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IDEA Electronic Components Group

UK . 988 parts In-Stock

1+ parts

$0.741

100+ parts

-

1k+ parts

$0.667

10k+ parts

-

988

$0.741

-

$0.667

-

MKK Technologies

India . 1,344 parts In-Stock

1+ parts

$1.393

100+ parts

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1,344

$1.393

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DigiPath Technology Company

USA . 1,344 parts In-Stock

1+ parts

$1.393

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1,344

$1.393

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Corohmni

South Africa . 951 parts In-Stock

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$1.634

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951

$1.634

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Aztec Data Supply Inc.

USA . 3,141 parts In-Stock

1+ parts

$1.790

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3,141

$1.790

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AZTECH Wire

Italy . 889 parts In-Stock

1+ parts

$18.152

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889

$18.152

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Ampacity Inc.

Singapore . 304 parts In-Stock

1+ parts

$27.050

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304

$27.050

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Perfect Parts

USA . 58,184 parts In-Stock

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58,184

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QUARKTWIN TECHNOLOGY LTD

USA . 3,930 parts In-Stock

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3,930

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Corphita

USA . 1,286 parts In-Stock

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1,286

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Parana Technologies

USA . 520 parts In-Stock

1+ parts

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100+ parts

$0.886

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520

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$0.886

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.029

1k+ parts

$0.028

10k+ parts

$0.028

100

-

$0.029

$0.028

$0.028

Overview

Experience the superior quality and reliability of the PN2907A-AP by STMicroelectronics, a leading manufacturer in the electronics industry. This small signal bipolar junction transistor (BJT) is perfect for switching applications, offering customers seamless performance and efficiency. With a high DC current gain and low power dissipation, this PNP transistor ensures optimal functionality and durability. Trust in STMicroelectronics to deliver cutting-edge technology that exceeds expectations and drives innovation in your designs. Elevate your projects with the PN2907A-AP and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides durability and protection for the transistor, ensuring long-term reliability in various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power applications and can easily switch off high currents, making them suitable for switching purposes.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can quickly turn on and off, making it ideal for use in relay drivers, motor control, and other switching circuits.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation capacity of 0.5W, this transistor can handle moderate power levels without overheating, ensuring stable performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate reliably in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

The transistor's high collector-emitter voltage rating of 60V enables it to withstand high voltage spikes and surges, increasing its robustness in the circuit.

Nominal Transition Frequency (fT): 200 MHz

With a high nominal transition frequency of 200MHz, this transistor can efficiently switch at high frequencies, making it suitable for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2907A-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn On Time (ton):

45 ns

Trade Compliance

PN2907A-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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