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PN2907ATF

Onsemi

PN2907ATF by Onsemi

PN2907ATF by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 0.8A. It has a min. DC current gain of 50, suitable for switching applications with a max. operating temp of 150°C and nominal transition frequency of 200MHz in a cylindrical package style.

Median Price

$0.072

Lifecycle Status

Suppliers In-Stock

23

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1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 6,910 parts In-Stock

1+ parts

$0.134

100+ parts

$0.052

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$0.045

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$0.039

6,910

$0.134

$0.052

$0.045

$0.039

Newark

USA . 3,000 parts In-Stock

1+ parts

$0.299

100+ parts

$0.116

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$0.076

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3,000

$0.299

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$0.076

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Mouser Electronics

USA . 7,999 parts In-Stock

1+ parts

$0.310

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$0.119

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$0.078

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$0.062

7,999

$0.310

$0.119

$0.078

$0.062

Adafruit Industries

USA . 100 parts In-Stock

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$0.486

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$0.462

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$0.462

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100

$0.486

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$0.462

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Flip Electronics (Authorized)

USA . 44,000 parts In-Stock

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DigiKey

USA . 24,788 parts In-Stock

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Rochester

USA . 20,337 parts In-Stock

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$0.049

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$0.036

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Verical

USA . 18,952 parts In-Stock

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Chip1Stop

Japan . 11,210 parts In-Stock

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$0.046

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Master Electronics

USA . 10,000 parts In-Stock

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Farnell

UK . 2,553 parts In-Stock

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$0.087

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$0.061

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$0.039

2,553

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Avnet

USA . 2,000 parts In-Stock

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2,000

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Element14

Singapore . 1,938 parts In-Stock

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$0.160

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$0.080

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$0.079

1,938

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$0.080

$0.079

Distributors (In-Stock)

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Digiode

USA . 921 parts In-Stock

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$0.035

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921

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Nova Conductors

Japan . 74 parts In-Stock

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$0.079

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Bristol Electronics

USA . 9,605 parts In-Stock

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$0.225

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$0.113

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$0.045

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$0.028

9,605

$0.225

$0.113

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$0.028

DigiKey Marketplace

USA . 55,385 parts In-Stock

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Flip Electronics

USA . 54,000 parts In-Stock

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Chip Stock

USA . 47,500 parts In-Stock

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Vyrian

USA . 19,934 parts In-Stock

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Semi Source

USA . 10,540 parts In-Stock

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IBS Electronics

USA . 10,000 parts In-Stock

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Semtec, LLC

USA . 1,900 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 18,571 parts In-Stock

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Ampacity Inc.

Singapore . 17,926 parts In-Stock

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Corphita

USA . 1,833 parts In-Stock

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Corohmni

South Africa . 325 parts In-Stock

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325

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Component Stockers USA

USA . 5,661 parts In-Stock

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5,661

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$0.040

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Argo Parts USA

USA . 297 parts In-Stock

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$0.076

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$0.074

297

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Continental Prestige Electronics

USA . 7,352 parts In-Stock

1+ parts

$0.274

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$0.077

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$0.041

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$0.035

7,352

$0.274

$0.077

$0.041

$0.035

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.486

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$0.462

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100

$0.486

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Aztec Data Supply Inc.

USA . 182 parts In-Stock

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$1.938

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Infinite Electronics LLP (Excess)

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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Perfect Parts

USA . 33,525 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,575 parts In-Stock

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iodParts Technologies Inc.

India . 9,580 parts In-Stock

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Problanco Electronics

Mexico . 5,370 parts In-Stock

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Kulean Microsystems

USA . 1,938 parts In-Stock

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SupplyDigital Components

Austria . 1,839 parts In-Stock

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Lixinc

USA . 1,204 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 784 parts In-Stock

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Supply Digital

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Robosynatics

Brazil . 350 parts In-Stock

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$24.308

Lucentia Tech

USA . 350 parts In-Stock

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$24.308

Netroflash

USA . 50 parts In-Stock

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$0.077

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$0.073

50

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UHIMA Technologies

Türkiye . 14 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the PN2907ATF by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP transistor is ideal for switching applications with its reliable single configuration. With a maximum collector-emitter voltage of 60V and a transition frequency of 200 MHz, this transistor offers unmatched efficiency and durability. Upgrade your electronics today with the PN2907ATF and experience superior functionality and seamless operation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are often used in amplification and switching circuits, making this product versatile for different types of electronic designs.

Maximum Power Dissipation (Abs): 0.625 W

With a relatively high maximum power dissipation, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to be used in a wide range of environments without performance degradation.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can be used in various voltage applications, providing flexibility in circuit design.

Nominal Transition Frequency (fT): 200 MHz

The high transition frequency indicates that this transistor is capable of handling high-frequency signals, making it suitable for applications that require fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2907ATF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

PN2907ATF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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