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PN2907ATAR

Onsemi

PN2907ATAR by Onsemi

PN2907ATAR by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 60V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (45ns/100ns) and high transition frequency (200MHz).

Median Price

$0.058

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 11,917 parts In-Stock

1+ parts

$0.310

100+ parts

$0.119

1k+ parts

$0.078

10k+ parts

$0.058

11,917

$0.310

$0.119

$0.078

$0.058

Adafruit Industries

USA . 3,000 parts In-Stock

1+ parts

$0.752

100+ parts

$0.714

1k+ parts

$0.714

10k+ parts

-

3,000

$0.752

$0.714

$0.714

-

DigiKey

USA . 19,667 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.058

19,667

-

-

-

$0.058

Arrow

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.056

10,000

-

-

-

$0.056

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.056

10,000

-

-

-

$0.056

Rochester

USA . 4,914 parts In-Stock

1+ parts

-

100+ parts

$0.049

1k+ parts

$0.041

10k+ parts

$0.036

4,914

-

$0.049

$0.041

$0.036

RS (Exports)

UK . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.256

200

-

-

-

$0.256

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,127 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

3,127

$0.038

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.077

100+ parts

-

1k+ parts

-

10k+ parts

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500

$0.077

-

-

-

Chip Stock

USA . 49,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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49,000

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-

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Flip Electronics

USA . 42,000 parts In-Stock

1+ parts

-

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42,000

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-

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Vyrian

USA . 8,932 parts In-Stock

1+ parts

-

100+ parts

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8,932

-

-

-

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NAC Semi

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

8,000

-

-

-

$0.050

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 9,327 parts In-Stock

1+ parts

$0.034

100+ parts

-

1k+ parts

-

10k+ parts

-

9,327

$0.034

-

-

-

Semicontronic

India . 8,678 parts In-Stock

1+ parts

$0.034

100+ parts

$0.033

1k+ parts

$0.033

10k+ parts

-

8,678

$0.034

$0.033

$0.033

-

Corphita

USA . 682 parts In-Stock

1+ parts

$0.036

100+ parts

-

1k+ parts

-

10k+ parts

-

682

$0.036

-

-

-

Corohmni

South Africa . 65 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

65

$0.040

-

-

-

Argo Parts USA

USA . 3,929 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

$0.074

3,929

$0.076

-

-

$0.074

Continental Prestige Electronics

USA . 309 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

$0.074

309

$0.076

-

-

$0.074

Bastille Electronics

Australia . 40 parts In-Stock

1+ parts

$0.077

100+ parts

$0.073

1k+ parts

$0.069

10k+ parts

$0.069

40

$0.077

$0.073

$0.069

$0.069

Aztec Data Supply Inc.

USA . 1,056 parts In-Stock

1+ parts

$0.423

100+ parts

-

1k+ parts

-

10k+ parts

-

1,056

$0.423

-

-

-

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.752

100+ parts

$0.714

1k+ parts

$0.714

10k+ parts

-

3,000

$0.752

$0.714

$0.714

-

Perfect Parts

USA . 38,080 parts In-Stock

1+ parts

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100+ parts

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38,080

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-

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Infinite Electronics LLP (Excess)

. 37,939 parts In-Stock

1+ parts

-

100+ parts

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37,939

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Formix International (Excess)

India . 37,930 parts In-Stock

1+ parts

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37,930

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Kulean Microsystems

USA . 7,584 parts In-Stock

1+ parts

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7,584

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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-

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Problanco Electronics

Mexico . 3,858 parts In-Stock

1+ parts

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3,858

-

-

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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-

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Supply Digital

USA . 2,805 parts In-Stock

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2,805

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TANS Electronics

Latvia . 1,762 parts In-Stock

1+ parts

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1,762

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-

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SupplyDigital Components

Austria . 1,467 parts In-Stock

1+ parts

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100+ parts

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1,467

-

-

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Allen Electronics Distributors

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.055

10k+ parts

$0.046

1,000

-

-

$0.055

$0.046

UHIMA Technologies

Türkiye . 645 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

645

-

-

-

-

Overview

Experience the superior quality and reliability of the PN2907ATAR by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers exceptional performance and durability in every product. The PN2907ATAR belongs to the small signal bipolar junction transistors (BJT) category, making it perfect for switching applications. With its PNP polarity and single configuration, this transistor offers seamless functionality and ease of use. Its cylindrical package shape and through-hole terminal form ensure convenient installation. With a maximum collector-emitter voltage of 60V and a maximum collector current of 0.8A, this transistor can handle demanding tasks with ease. Trust the PN2907ATAR to provide you with the value, benefits, and advantages you need for your projects.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides excellent insulation and protection for the transistor, making it durable and suitable for various applications.

Polarity or Channel Type:

PNP - The PNP configuration allows for easy integration into circuits requiring PNP transistors, enhancing compatibility and versatility.

Configuration:

SINGLE - This single configuration simplifies circuit design and enables easy implementation in small signal switching applications.

Transistor Application:

SWITCHING - Designed specifically for switching applications, this transistor ensures efficient and reliable performance in various electrical switching scenarios.

Package Shape:

ROUND - The round package shape offers compactness and ease of mounting, making it ideal for space-constrained environments.

Terminal Form:

THROUGH-HOLE - The through-hole terminal form ensures robust mechanical connections, making installation and soldering hassle-free.

No. of Elements:

1 - This single-element transistor provides simplicity in circuit design and helps reduce overall complexity.

No. of Terminals:

3 - With three terminals, this transistor allows for flexible connection options and enables versatile circuit applications.

Maximum Power Dissipation (Abs):

0.625 W - The high maximum power dissipation rating allows the transistor to handle significant power loads, ensuring reliability and preventing overheating issues.

Package Style (Meter):

CYLINDRICAL - The cylindrical package style facilitates easy installation and secure mounting, promoting stability and electrical performance.

Minimum DC Current Gain (hFE):

50 - With a minimum DC current gain of 50, this transistor provides amplification capabilities, enhancing signal control and precision.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature allows the transistor to sustain operation in demanding conditions without performance degradation.

Maximum Collector-Emitter Voltage:

60 V - With a maximum collector-emitter voltage rating of 60 V, this transistor is suitable for various voltage requirements, ensuring compatibility across different circuits.

Transistor Element Material:

SILICON - The use of silicon as the transistor element material ensures optimal electrical characteristics, making it highly reliable and commonly used in semiconductor devices.

Maximum Turn On Time (ton):

45 ns - The fast turn-on time enables quick activation of the transistor, enhancing response speed and allowing for efficient switching operations.

Maximum Collector Current (IC):

0.8 A - With a maximum collector current of 0.8 A, this transistor can handle higher current flows, making it suitable for applications requiring higher power capabilities.

Maximum Turn Off Time (toff):

100 ns - The relatively fast turn-off time ensures swift termination of current flow, promoting efficient switching performance.

Terminal Finish:

MATTE TIN - The matte tin terminal finish offers excellent solderability and corrosion resistance, ensuring reliable electrical connections and longevity.

Terminal Position:

BOTTOM - The bottom terminal position simplifies circuit board layout, enabling more compact designs and efficient space utilization.

Nominal Transition Frequency (fT):

200 MHz - The high nominal transition frequency makes this transistor suitable for high-frequency applications, ensuring accurate and reliable signal reproduction.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PN2907ATAR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

PN2907ATAR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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