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MPSA18RLRMG

Onsemi

MPSA18RLRMG by Onsemi

MPSA18RLRMG by Onsemi is a NPN BJT transistor with 500 min hFE, 45V VCEO, and 160MHz fT. Ideal for amplifier applications due to its 0.2A IC, 0.625W Pdiss, and cylindrical package style. Suitable for through-hole mounting with bottom terminal position.

Median Price

$0.100

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8,608 parts In-Stock

1+ parts

$0.108

100+ parts

$0.063

1k+ parts

$0.052

10k+ parts

-

8,608

$0.108

$0.063

$0.052

-

Chip1Stop

Japan . 32,254 parts In-Stock

1+ parts

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32,254

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Rochester

USA . 23,565 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

23,565

-

$0.092

$0.077

$0.068

DigiKey

USA . 23,565 parts In-Stock

1+ parts

-

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$0.120

23,565

-

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$0.120

Verical

USA . 12,000 parts In-Stock

1+ parts

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10k+ parts

$0.086

12,000

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-

-

$0.086

Distributors (In-Stock)

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Digiode

USA . 891 parts In-Stock

1+ parts

$0.031

100+ parts

-

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891

$0.031

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Chip Stock

USA . 77,000 parts In-Stock

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77,000

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ACDS - Activité Composants Distribution Service

France . 40,000 parts In-Stock

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40,000

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Vyrian

USA . 11,783 parts In-Stock

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11,783

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Distributors (Availability)

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Corphita

USA . 2,311 parts In-Stock

1+ parts

$0.030

100+ parts

-

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2,311

$0.030

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Corohmni

South Africa . 354 parts In-Stock

1+ parts

$0.076

100+ parts

-

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354

$0.076

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AZTECH Wire

Italy . 117 parts In-Stock

1+ parts

$8.080

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117

$8.080

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Perfect Parts

USA . 172,768 parts In-Stock

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172,768

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Continental Prestige Electronics

USA . 43,565 parts In-Stock

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$0.069

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43,565

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$0.069

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Cyclops Electronics Ltd (Excess)

UK . 40,000 parts In-Stock

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40,000

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Glotronic Ltd.

UK . 32,000 parts In-Stock

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32,000

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TANS Electronics

Latvia . 6,841 parts In-Stock

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6,841

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Kulean Microsystems

USA . 5,643 parts In-Stock

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5,643

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Problanco Electronics

Mexico . 3,390 parts In-Stock

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3,390

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SupplyDigital Components

Austria . 3,321 parts In-Stock

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3,321

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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UHIMA Technologies

Türkiye . 6 parts In-Stock

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6

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Overview

Unlock the power of innovation with the MPSA18RLRMG by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers unparalleled quality and reliability. Ideal for amplifier applications, this product boasts a high DC current gain of 500, allowing for optimal performance. With a maximum operating temperature of 150°C and a collector-emitter voltage of 45V, the MPSA18RLRMG is built to exceed expectations. Trust Onsemi to deliver cutting-edge technology that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, suitable for various electronic applications.

Polarity or Channel Type: NPN

The NPN polarity or channel type allows for easy integration into NPN transistor circuits, making it compatible with a wide range of amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, making it easier to use in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides excellent amplification properties for audio or signal processing.

Package Shape: ROUND

The round package shape allows for efficient and space-saving PCB layout, ideal for compact electronic designs.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enables easy and secure soldering onto a PCB, ensuring stable connections and reliability.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle significant power, making it suitable for high-performance amplifier applications.

Minimum DC Current Gain (hFE): 500

The high minimum DC current gain indicates strong signal amplification capabilities, ensuring reliable and consistent performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating provides a wide voltage range for the transistor to operate within, offering flexibility in amplifier circuit designs.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, improved reliability, and low noise in amplifier applications.

Maximum Collector Current (IC): 0.2 A

With a maximum collector current of 0.2 A, this transistor can handle moderate current levels, suitable for various amplifier circuit requirements.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper provides excellent conductivity and corrosion resistance, ensuring long-term reliability in amplifier circuits.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy PCB mounting and soldering, making it convenient for assembly and integration into amplifier circuits.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable and secure soldering during assembly, ensuring robust connections in amplifier circuit applications.

Nominal Transition Frequency (fT): 160 MHz

The high nominal transition frequency indicates fast switching speeds and high-frequency performance, making this transistor suitable for high-speed amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA18RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA18RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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