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MPS8099G

Onsemi

MPS8099G by Onsemi

MPS8099G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and can handle up to 80V collector-emitter voltage. With a transition frequency of 150MHz and operating temp of 150°C, it's suitable for various electronic circuits requiring high-speed switching capabilities.

Median Price

$0.770

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 9 parts In-Stock

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$0.770

100+ parts

$0.580

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$0.500

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9

$0.770

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Chip Stock

USA . 23,000 parts In-Stock

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Vyrian

USA . 10,048 parts In-Stock

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Digiode

USA . 1,106 parts In-Stock

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Nova Conductors

Japan . 38 parts In-Stock

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LittleDiode

UK . 19 parts In-Stock

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J & M Industries LLC

USA . 10 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 157 parts In-Stock

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$0.770

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157

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AZTECH Wire

Italy . 723 parts In-Stock

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$6.155

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723

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Ampacity Inc.

Singapore . 996 parts In-Stock

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$37.050

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996

$37.050

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Kepictronics

USA . 45,000 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Perfect Parts

USA . 13,978 parts In-Stock

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TANS Electronics

Latvia . 7,790 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,336 parts In-Stock

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SupplyDigital Components

Austria . 5,379 parts In-Stock

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Assy Fe

Spain . 2,465 parts In-Stock

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Kulean Microsystems

USA . 2,231 parts In-Stock

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Argo Parts USA

USA . 1,371 parts In-Stock

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Corphita

USA . 1,119 parts In-Stock

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Problanco Electronics

Mexico . 820 parts In-Stock

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UHIMA Technologies

Türkiye . 720 parts In-Stock

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Continental Prestige Electronics

USA . 540 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MPS8099G Small Signal Bipolar Junction Transistor from Onsemi. With a reputation for reliability and innovation, Onsemi delivers cutting-edge technology that ensures top performance in amplifier applications. The NPN configuration and cylindrical package shape make it easy to integrate into your designs, while the maximum operating temperature of 150°C guarantees durability. Trust Onsemi to provide you with a product that offers superior value, benefits, and advantages for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it versatile for various applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in electronic projects.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, producing clear and strong signals.

Package Shape: ROUND

Facilitates easy installation and connection within a circuit board.

Terminal Form: THROUGH-HOLE

Enables secure and stable soldering connections for reliable performance.

Maximum Power Dissipation (Abs): 0.625 W

Can handle relatively high power levels without risking damage, ensuring stable operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 80 V

Allows for a high voltage range, making it compatible with various voltage levels in circuits.

Transistor Element Material: SILICON

Offers excellent performance and reliability for electronic applications.

Maximum Collector Current (IC): 0.5 A

Supports moderate current flow, suitable for many common electronic tasks.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance, ensuring stable connections.

Nominal Transition Frequency (fT): 150 MHz

Delivers high-frequency response, making it suitable for audio and radio frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS8099G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS8099G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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