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MPS8098

Onsemi

MPS8098 by Onsemi

MPS8098 by Onsemi is a NPN BJT transistor with 3 terminals and 0.5A max collector current. With hFE of 75, it operates up to 150°C and has a max voltage of 60V. Ideal for amplifier applications due to its 150MHz transition frequency in a cylindrical package.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

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Adafruit Industries

USA . 100 parts In-Stock

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$1.576

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Farnell

UK . 5,037 parts In-Stock

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Rochester

USA . 4,510 parts In-Stock

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$0.053

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$0.044

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$0.039

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Arrow

USA . 3 parts In-Stock

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Chip1Stop

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Nova Conductors

Japan . 94 parts In-Stock

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Digiode

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DF Sales Co.

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DF Sales Co.

USA . 364 parts In-Stock

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Ace Electronics

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Bristol Electronics

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Chip Stock

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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PC Components Company LLC

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Anansix

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Lighthouse Electronics, Inc.

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R&J Components

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Flex Direct, LLC

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Vyrian

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Holdelec - ElecDif-Pro

France . 1,267 parts In-Stock

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Lantek

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EMSNET

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Goldney Electronics S.L.

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Manoshevitz Elec. Sales

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LittleDiode

UK . 23 parts In-Stock

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Elcom Components

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Prism Electronics

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Distributors (Availability)

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Semicontronic

India . 1,543 parts In-Stock

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Corohmni

South Africa . 218 parts In-Stock

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Argo Parts USA

USA . 4,829 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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Corphita

USA . 7,065 parts In-Stock

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IDEA Electronic Components Group

UK . 700 parts In-Stock

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$0.378

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MKK Technologies

India . 278 parts In-Stock

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$0.711

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DigiPath Technology Company

USA . 278 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.576

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$1.434

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$1.292

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$1.576

$1.434

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Component Stockers USA

USA . 205 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 13,263 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 6,773 parts In-Stock

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TANS Electronics

Latvia . 6,595 parts In-Stock

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Kulean Microsystems

USA . 6,119 parts In-Stock

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Continental Prestige Electronics

USA . 4,985 parts In-Stock

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UNI Independent Distributors

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Problanco Electronics

Mexico . 3,126 parts In-Stock

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Kepictronics

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Assy Fe

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Supply Digital

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UHIMA Technologies

Türkiye . 713 parts In-Stock

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Parana Technologies

USA . 659 parts In-Stock

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Perfect Parts

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Overview

Unleash the power of innovation with the MPS8098 by Onsemi. Known for their superior quality and reliability, Onsemi has crafted this Small Signal Bipolar Junction Transistor (BJT) to amplify your projects to new heights. Whether you're designing amplifiers or other electronic circuits, the MPS8098 offers unmatched performance with its NPN configuration and maximum collector current of 0.5 A. With a minimum DC current gain of 75 and a peak reflow temperature of 235°C, this transistor is a game-changer in the world of electronics. Elevate your creations with the MPS8098 and experience the difference that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and makes the transistor easy to use.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, providing high gain and low noise performance.

Maximum Power Dissipation (Abs): 0.625 W

Allows for the transistor to handle higher power levels without overheating.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications where higher voltage operation is required.

Maximum Collector Current (IC): 0.5 A

Can handle higher current levels, making it suitable for a variety of applications.

Nominal Transition Frequency (fT): 150 MHz

Provides high-frequency performance, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS8098 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS8098 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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