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MPS8098RL1

Onsemi

MPS8098RL1 by Onsemi

MPS8098RL1 by Onsemi is a NPN BJT transistor with hFE of 75, VCE of 60V, and fT of 150MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style. Operates at temperatures up to 150 °C with a collector current of 0.5A.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,343 parts In-Stock

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Vyrian

USA . 1,496 parts In-Stock

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Problanco Electronics

Mexico . 5,343 parts In-Stock

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TANS Electronics

Latvia . 1,723 parts In-Stock

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Corphita

USA . 1,216 parts In-Stock

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SupplyDigital Components

Austria . 951 parts In-Stock

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Kulean Microsystems

USA . 720 parts In-Stock

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UHIMA Technologies

Türkiye . 256 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MPS8098RL1 by Onsemi, a leading manufacturer in the industry. This small signal bipolar junction transistor offers excellent performance as an amplifier, making it ideal for a wide range of applications. With a maximum collector-emitter voltage of 60V and a nominal transition frequency of 150 MHz, this NPN transistor provides reliable functionality and durability. Upgrade your designs with the value and benefits that only Onsemi can deliver. Trust in the MPS8098RL1 to bring your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the transistor, ensuring its durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into various electronic devices.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, providing high-quality amplification capabilities.

Package Shape: ROUND

The round shape of the package offers easy and secure mounting options in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easier to solder and connect the transistor to a circuit board, ensuring secure connections.

No. of Terminals: 3

The three terminals provide the necessary connections for the transistor to function effectively in a circuit.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design for efficient circuit integration.

Minimum DC Current Gain (hFE): 75

The high minimum DC current gain ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating allows for safe and stable operation within specified voltage limits.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in electronic components.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating of 0.5 A allows for moderate power handling capabilities in various circuit applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good solderability and resistance to environmental factors, enhancing the longevity of the transistor.

Terminal Position: BOTTOM

The bottom terminal position offers convenient soldering and connection options for easy integration into circuit designs.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency allows for fast signal switching and high-frequency applications, making it suitable for various electronic projects.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS8098RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS8098RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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