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MPS8098RLRA

Onsemi

MPS8098RLRA by Onsemi

MPS8098RLRA by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 75, and operates at up to 150 °C. This through-hole transistor has a max collector-emitter voltage of 60V and can handle a max collector current of 0.5A.

Median Price

$0.099

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,484 parts In-Stock

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-

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$0.079

1k+ parts

$0.066

10k+ parts

$0.059

4,484

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$0.079

$0.066

$0.059

DigiKey

USA . 4,484 parts In-Stock

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$0.100

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$0.100

Verical

USA . 4,484 parts In-Stock

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$0.099

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Distributors (In-Stock)

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Digiode

USA . 967 parts In-Stock

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$0.062

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967

$0.062

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Vyrian

USA . 1,718 parts In-Stock

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$0.065

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DigiKey Marketplace

USA . 6,000 parts In-Stock

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Bristol Electronics

USA . 1,930 parts In-Stock

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$0.113

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$0.068

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$0.068

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Semi Source

USA . 1,906 parts In-Stock

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Microfarads

USA . 1,824 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,226 parts In-Stock

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$0.058

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Corohmni

South Africa . 470 parts In-Stock

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470

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QUARKTWIN TECHNOLOGY LTD

USA . 23,401 parts In-Stock

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Continental Prestige Electronics

USA . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 4,950 parts In-Stock

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Problanco Electronics

Mexico . 4,740 parts In-Stock

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TANS Electronics

Latvia . 3,525 parts In-Stock

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Kulean Microsystems

USA . 1,952 parts In-Stock

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UHIMA Technologies

Türkiye . 680 parts In-Stock

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Overview

Upgrade your electronic projects with the MPS8098RLRA by Onsemi, a high-quality NPN Small Signal Bipolar Junction Transistor (BJT) perfect for amplifier applications. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 75, this transistor offers exceptional performance and reliability. Onsemi's reputation for superior manufacturing ensures top-notch quality, while the cylindrical package shape makes it easy to integrate into your designs. Experience enhanced functionality and efficiency with the MPS8098RLRA - the perfect choice for your next project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other applications, making this transistor versatile and widely applicable.

Configuration: SINGLE

Simplified design with a single configuration makes it easy to integrate into circuits and reduces complexity.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

Compact round shape allows for easy mounting and integration in various electronic devices.

Maximum Power Dissipation: 0.625 W

Can handle relatively high power dissipation, making it suitable for amplification tasks without overheating.

Minimum DC Current Gain (hFE): 75

High DC current gain ensures efficient signal amplification and reliable performance.

Maximum Operating Temperature: 150 °C

Can tolerate high temperatures without compromising performance, suitable for various operating environments.

Maximum Collector-Emitter Voltage: 60 V

With a high collector-emitter voltage rating, it can handle a wide range of voltage levels in circuits.

Maximum Collector Current (IC): 0.5 A

Able to handle higher collector currents, making it suitable for applications requiring higher current amplification.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and electrical conductivity, ensuring reliable connections.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for high-speed switching and amplification, ideal for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS8098RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS8098RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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