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MPS6523G

Onsemi

MPS6523G by Onsemi

MPS6523G by Onsemi is a PNP BJT transistor with hFE of 300, fT of 340 MHz, and IC of 0.1 A. Ideal for amplifier applications due to its max power dissipation of 0.625 W and operating temperature up to 150°C in a cylindrical package.

Median Price

$1.031

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Master Electronics

USA . 260,738 parts In-Stock

1+ parts

$1.190

100+ parts

$0.695

1k+ parts

$0.270

10k+ parts

$0.170

260,738

$1.190

$0.695

$0.270

$0.170

Verical

USA . 253,143 parts In-Stock

1+ parts

-

100+ parts

$0.872

1k+ parts

$0.339

10k+ parts

-

253,143

-

$0.872

$0.339

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Distributors (In-Stock)

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Digiode

USA . 1,753 parts In-Stock

1+ parts

$1.130

100+ parts

-

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1,753

$1.130

-

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IBS Electronics

USA . 260,738 parts In-Stock

1+ parts

$1.669

100+ parts

$0.975

1k+ parts

$0.379

10k+ parts

$0.238

260,738

$1.669

$0.975

$0.379

$0.238

Vyrian

USA . 5,734 parts In-Stock

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5,734

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Distributors (Availability)

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Corohmni

South Africa . 330 parts In-Stock

1+ parts

$0.872

100+ parts

-

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330

$0.872

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Corphita

USA . 1,764 parts In-Stock

1+ parts

$1.071

100+ parts

-

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1,764

$1.071

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AZTECH Wire

Italy . 259 parts In-Stock

1+ parts

$9.400

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259

$9.400

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QUARKTWIN TECHNOLOGY LTD

USA . 15,320 parts In-Stock

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15,320

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Problanco Electronics

Mexico . 7,258 parts In-Stock

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7,258

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Kulean Microsystems

USA . 3,417 parts In-Stock

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3,417

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UHIMA Technologies

Türkiye . 973 parts In-Stock

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973

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SupplyDigital Components

Austria . 778 parts In-Stock

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778

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TANS Electronics

Latvia . 726 parts In-Stock

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726

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Overview

Unlock unparalleled performance with the MPS6523G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) is perfect for amplifier applications, offering a maximum power dissipation of 0.625W and a nominal transition frequency of 340 MHz. With a maximum collector-emitter voltage of 25V and a minimum DC current gain of 300, this PNP transistor provides exceptional value and efficiency. Upgrade your electronic projects with the MPS6523G and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits requiring PNP transistors, expanding the compatibility of this product.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor can provide excellent amplification of signals in audio or other electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand and perform reliably in elevated temperature conditions.

Minimum DC Current Gain (hFE): 300

The minimum DC current gain of 300 indicates that this transistor is capable of providing significant amplification of current, making it ideal for various amplification applications.

Maximum Collector-Emitter Voltage: 25 V

The high maximum collector-emitter voltage of 25V allows for handling of higher voltage levels, increasing the versatility and range of applications for this transistor.

Nominal Transition Frequency (fT): 340 MHz

With a high nominal transition frequency of 340 MHz, this transistor is suitable for high-frequency applications such as RF amplification, ensuring efficient signal handling.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6523G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6523G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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