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MPS8599G

Onsemi

MPS8599G by Onsemi

MPS8599G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. It is used in amplifier applications due to its max. collector-emitter voltage of 80V and nominal transition frequency of 150MHz.

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Lifecycle Status

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Digiode

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AZTECH Wire

Italy . 1,151 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,361 parts In-Stock

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Kulean Microsystems

USA . 6,982 parts In-Stock

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TANS Electronics

Latvia . 5,030 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Overview

Enhance your electronic projects with the MPS8599G by Onsemi! Manufactured by the trusted brand Onsemi, this PNP Small Signal Bipolar Junction Transistor (BJT) offers exceptional quality and reliability. Ideal for amplifier applications, this transistor boasts a maximum collector-emitter voltage of 80V and a high DC current gain of 75. With a maximum power dissipation of 0.625W and a nominal transition frequency of 150MHz, the MPS8599G delivers outstanding performance. Upgrade your circuits with this top-notch component and experience superior functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and durability for the transistor, making it reliable for long-term use.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, which makes this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation capacity, this transistor can handle higher power levels without overheating.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating makes this transistor suitable for circuits where higher voltages are present.

Nominal Transition Frequency (fT): 150 MHz

This high transition frequency allows for faster switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS8599G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS8599G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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