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MPSA56ZL1G

Onsemi

MPSA56ZL1G by Onsemi

MPSA56ZL1G by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.5A, ideal for amplifier applications. It has a min. DC current gain of 100, operates up to 150 °C, and features a cylindrical package style for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 2,406 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,000 parts In-Stock

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ComSIT USA

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ACDS - Activité Composants Distribution Service

France . 1,597 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 859 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 8,304 parts In-Stock

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Problanco Electronics

Mexico . 8,147 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,991 parts In-Stock

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Kulean Microsystems

USA . 5,828 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,597 parts In-Stock

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Glotronic Ltd.

UK . 1,278 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 381 parts In-Stock

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SupplyDigital Components

Austria . 292 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the MPSA56ZL1G Small Signal Bipolar Junction Transistor from Onsemi. Known for their top-quality components, Onsemi delivers reliability and performance in every product they manufacture. This PNP transistor is ideal for amplifier applications, providing a seamless integration into your designs. With a high DC current gain, maximum power dissipation, and collector-emitter voltage, this transistor offers unmatched value and benefits for your projects. Upgrade your circuits today with the MPSA56ZL1G and experience the difference that Onsemi quality can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuits, enhancing compatibility and ease of use.

Transistor Application: AMPLIFIER

Ideal for amplification purposes, offering reliable performance in audio and signal processing applications.

Maximum Power Dissipation (Abs): 0.625 W

Can handle higher power levels without overheating, ensuring stable operation under demanding conditions.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring high voltage levels, providing versatility and flexibility in circuit design.

Nominal Transition Frequency (fT): 50 MHz

Offers high frequency response, making it suitable for high-speed signal processing and communication applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA56ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA56ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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