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MPS6560G

Onsemi

MPS6560G by Onsemi

MPS6560G by Onsemi is a NPN BJT transistor with 3 terminals and 0.625W power dissipation. Ideal for amplifier applications, it has a max collector-emitter voltage of 25V, hFE of 50, and operates up to 150 °C.

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Vyrian

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Digiode

USA . 859 parts In-Stock

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AZTECH Wire

Italy . 142 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,327 parts In-Stock

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Kulean Microsystems

USA . 8,277 parts In-Stock

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Problanco Electronics

Mexico . 4,757 parts In-Stock

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Corphita

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SupplyDigital Components

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TANS Electronics

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Overview

Upgrade your electronics with the MPS6560G by Onsemi, a premium quality Small Signal Bipolar Junction Transistor (BJT) ideal for amplifier applications. Manufactured with precision and expertise, this NPN transistor offers superior performance and reliability. With a maximum power dissipation of 0.625W and a high DC current gain of 50, this transistor ensures optimal efficiency and functionality. Trust in Onsemi's reputation for excellence and choose the MPS6560G for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and reliability of the product.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into common electronics circuits, making it versatile for various applications.

Configuration: SINGLE

The single configuration simplifies the design and use of the transistor in circuits, reducing complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Package Shape: ROUND

The round package shape allows for efficient placement and installation in circuit boards or systems.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide secure connections and easy soldering during assembly.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain of 50 indicates good amplification capabilities for different signal levels.

Maximum Operating Temperature: 150 °C

Operates reliably at temperatures up to 150 °C, suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 25 V

The maximum collector-emitter voltage rating of 25 V ensures safe operation within specified voltage limits.

Transistor Element Material: SILICON

Silicon material in the transistor element provides stable performance and high efficiency in signal processing.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current loads in amplification circuits.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper provides excellent conductivity and resistance to corrosion, ensuring long-term reliability.

Terminal Position: BOTTOM

The bottom terminal position simplifies soldering and connection to circuit boards, enhancing ease of use.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperatures of 260 °C during assembly, ensuring proper soldering and reliability.

Nominal Transition Frequency (fT): 60 MHz

With a nominal transition frequency of 60 MHz, this transistor is suitable for high-frequency signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6560G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6560G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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