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MPS3646RLRAG

Onsemi

MPS3646RLRAG by Onsemi

MPS3646RLRAG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 15V and max current of 0.3A. It has a min DC current gain of 15, ideal for switching applications with a transition frequency of 350MHz. The package style is cylindrical, suitable for through-hole mounting in various electronic circuits.

Median Price

$0.225

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 28,000 parts In-Stock

1+ parts

$0.225

100+ parts

$0.113

1k+ parts

$0.045

10k+ parts

$0.028

28,000

$0.225

$0.113

$0.045

$0.028

Vyrian

USA . 1,999 parts In-Stock

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-

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1,999

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Digiode

USA . 934 parts In-Stock

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934

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

1+ parts

$0.460

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100

$0.460

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AZTECH Wire

Italy . 1,098 parts In-Stock

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$8.960

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1,098

$8.960

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Component Stockers USA

USA . 329 parts In-Stock

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$99.990

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329

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 11,889 parts In-Stock

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TANS Electronics

Latvia . 6,921 parts In-Stock

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6,921

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Problanco Electronics

Mexico . 2,538 parts In-Stock

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SupplyDigital Components

Austria . 2,106 parts In-Stock

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Corphita

USA . 2,087 parts In-Stock

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Kulean Microsystems

USA . 1,481 parts In-Stock

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UHIMA Technologies

Türkiye . 945 parts In-Stock

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Corohmni

South Africa . 171 parts In-Stock

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Overview

Discover the power and precision of the MPS3646RLRAG by Onsemi, a top-tier manufacturer renowned for excellence in small signal bipolar junction transistors. Ideal for switching applications, this NPN transistor offers unparalleled performance and reliability, making it a must-have component for your projects. With a maximum operating temperature of 150 °C and a nominal transition frequency of 350 MHz, this transistor delivers exceptional value and superior functionality. Upgrade your designs with the MPS3646RLRAG and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Polarity or Channel Type: NPN

Allows for current to flow from the collector to the emitter when a positive voltage is applied to the base, making it suitable for a wide range of applications.

Configuration: SINGLE

Simplified design with a single transistor, easy to integrate into circuits.

Transistor Application: SWITCHING

Designed for fast switching applications, suitable for use in electronic switches and amplifiers.

Package Shape: ROUND

Compact design for space-saving installations.

Maximum Power Dissipation (Abs): 0.625 W

Can handle power dissipation efficiently without overheating.

Minimum DC Current Gain (hFE): 15

Ensures reliable and consistent amplification of input signals.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 15 V

Suitable for low voltage applications.

Transistor Element Material: SILICON

Provides high performance and reliability for the transistor.

Maximum Turn On Time (ton): 18 ns

Fast turn-on time for quick response in switching applications.

Maximum Collector Current (IC): 0.3 A

Able to handle moderate current levels for a variety of applications.

Maximum Turn Off Time (toff): 28 ns

Fast turn-off time for efficient switching operations.

Nominal Transition Frequency (fT): 350 MHz

High transition frequency for fast signal processing and switching speed.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS3646RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

28 ns

Maximum Turn On Time (ton):

18 ns

Trade Compliance

MPS3646RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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