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MPS3638ARLRA

Onsemi

MPS3638ARLRA by Onsemi

MPS3638ARLRA by Onsemi is a PNP BJT transistor with hFE of 20, VCEO of 25V, and IC of 0.5A. Ideal for switching applications with a max operating temp of 150 °C. Package style: cylindrical, terminals: through-hole, and fT: 150MHz make it versatile for various electronic designs.

Median Price

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Lifecycle Status

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2

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< 1k

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Digiode

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SupplyDigital Components

Austria . 8,376 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 4,166 parts In-Stock

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UHIMA Technologies

Türkiye . 854 parts In-Stock

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Kulean Microsystems

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Corohmni

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Corphita

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Overview

Enhance your electronic projects with the MPS3638ARLRA from Onsemi, a high-quality Small Signal Bipolar Junction Transistor that promises reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is ideal for switching applications, offering seamless operation and efficiency. With a maximum collector-emitter voltage of 25V and a nominal transition frequency of 150 MHz, this transistor ensures smooth functionality. Upgrade your designs with the MPS3638ARLRA and experience enhanced precision and control like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for certain circuit applications where PNP transistors are preferred.

Configuration: SINGLE

Simplified design with a single transistor, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance.

Package Shape: ROUND

Compact round shape allowing for easier handling and installation.

Terminal Form: THROUGH-HOLE

Traditional through-hole mounting for easy soldering and secure connections.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low-voltage applications, providing a wide range of circuit compatibility.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate current loads, making it versatile for various applications.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS3638ARLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

170 ns

Maximum Turn On Time (ton):

75 ns

Trade Compliance

MPS3638ARLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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