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MPS3638ARL1

Onsemi

MPS3638ARL1 by Onsemi

MPS3638ARL1 by Onsemi is a PNP BJT transistor with hFE of 20, VCEO of 25V, and IC of 0.5A. Ideal for switching applications due to its fast ton of 75ns and toff of 170ns at an operating temp up to 150 °C. The through-hole cylindrical package makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,376 parts In-Stock

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Vyrian

USA . 896 parts In-Stock

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Problanco Electronics

Mexico . 8,347 parts In-Stock

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TANS Electronics

Latvia . 7,173 parts In-Stock

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Kulean Microsystems

USA . 6,425 parts In-Stock

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SupplyDigital Components

Austria . 5,866 parts In-Stock

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UHIMA Technologies

Türkiye . 247 parts In-Stock

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Corphita

USA . 217 parts In-Stock

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Corohmni

South Africa . 52 parts In-Stock

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Overview

Unleash the power of technology with the MPS3638ARL1 by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. With a maximum collector-emitter voltage of 25V and a nominal transition frequency of 150MHz, this PNP transistor is designed to deliver efficiency and reliability. Whether you're looking to enhance your electronic projects or streamline your industrial processes, the MPS3638ARL1 is the perfect solution. Trust Onsemi for quality, trust this transistor for exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SINGLE

Simplified design and easy to use in circuits.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring fast and efficient operation.

Package Shape: ROUND

Allows for easy mounting in round packages or sockets.

Terminal Form: THROUGH-HOLE

Suited for through-hole PCB mounting, providing mechanical stability.

No. of Terminals: 3

Simple connection with minimal terminal requirements.

Package Style (Meter): CYLINDRICAL

Compact design suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 20

Ensures reliable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, enhancing reliability.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low voltage applications.

Transistor Element Material: SILICON

Provides high performance and reliability in various operating conditions.

Maximum Turn On Time (ton): 75 ns

Fast turn-on time ensures quick response in switching applications.

Maximum Collector Current (IC): 0.5 A

Sufficient collector current for many common applications.

Maximum Turn Off Time (toff): 170 ns

Fast turn-off time for efficient operation in switching circuits.

Terminal Finish: TIN LEAD

Provides good solderability and corrosion resistance.

Terminal Position: BOTTOM

Convenient terminal placement for easy PCB mounting.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency for fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS3638ARL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

170 ns

Maximum Turn On Time (ton):

75 ns

Trade Compliance

MPS3638ARL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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