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MPS3398

Onsemi

MPS3398 by Onsemi

MPS3398 by Onsemi is a NPN BJT transistor with 3 terminals and max power dissipation of 0.625W. It is ideal for switching applications, with a max collector-emitter voltage of 25V and max collector current of 0.1A. The package style is cylindrical, making it suitable for through-hole mounting in various electronic circuits.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 1,817 parts In-Stock

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Digiode

USA . 863 parts In-Stock

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Anansix

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Component Electronics Inc.

Canada . 12 parts In-Stock

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Problanco Electronics

Mexico . 6,795 parts In-Stock

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TANS Electronics

Latvia . 4,346 parts In-Stock

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Kulean Microsystems

USA . 4,129 parts In-Stock

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SupplyDigital Components

Austria . 1,046 parts In-Stock

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UHIMA Technologies

Türkiye . 887 parts In-Stock

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Corphita

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Corohmni

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Overview

Upgrade your electronic devices with the MPS3398 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) perfect for switching applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers reliability and performance. With a maximum collector-emitter voltage of 25V and a maximum operating temperature of 150 °C, this transistor is designed to handle demanding tasks with ease. Its compact cylindrical package makes it easy to integrate into various projects. Experience enhanced efficiency and precision with the MPS3398, a valuable addition to your electronics toolkit.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, making it versatile for a variety of circuit designs.

Configuation: SINGLE

Simplifies the circuit design and reduces complexity, making it easier to implement in electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in tasks that require rapid on/off switching.

Package Shape: ROUND

Offers a compact and space-saving design, suitable for applications where size constraints are a concern.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto PCBs, making installation and replacement convenient for hobbyists and professionals alike.

No. of Terminals: 3

Sufficient number of terminals for connecting the transistor in a circuit, providing flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.625 W

Can handle relatively high power levels, ensuring stable operation in demanding applications.

Package Style (Meter): CYLINDRICAL

Allows for efficient heat dissipation, preventing overheating and ensuring reliable performance over extended periods.

Minimum DC Current Gain (hFE): 55

Provides consistent and predictable amplification characteristics, crucial for precise control in electronic circuits.

Maximum Operating Temperature: 150 °C

Can operate at elevated temperatures without performance degradation, suitable for applications that require high temperature resilience.

Maximum Collector-Emitter Voltage: 25 V

Can withstand relatively high voltage levels, offering robustness and protection against voltage spikes in the circuit.

Transistor Element Material: SILICON

Ensures reliable and consistent performance, with high switching speeds and low leakage currents for efficient operation.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for low to medium power applications.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity, ensuring secure connections and reliable performance in the circuit.

Terminal Position: BOTTOM

Facilitates easy and stable mounting on PCBs, ensuring proper alignment and secure installation in electronic devices.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS3398 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

55

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPS3398 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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