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MPS3397

Onsemi

MPS3397 by Onsemi

MPS3397 by Onsemi is a NPN BJT transistor with 3 terminals and max power dissipation of 0.625W. Ideal for switching applications, it has a min hFE of 55 and max collector-emitter voltage of 25V. Its package style is cylindrical with terminal finish in tin lead, suitable for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,887 parts In-Stock

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Anansix

USA . 2,522 parts In-Stock

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Vyrian

USA . 1,711 parts In-Stock

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SupplyDigital Components

Austria . 7,923 parts In-Stock

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Kulean Microsystems

USA . 7,591 parts In-Stock

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Problanco Electronics

Mexico . 5,232 parts In-Stock

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TANS Electronics

Latvia . 2,730 parts In-Stock

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Corphita

USA . 1,459 parts In-Stock

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UHIMA Technologies

Türkiye . 340 parts In-Stock

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Corohmni

South Africa . 114 parts In-Stock

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Overview

Unleash the power of innovation with the MPS3397 Small Signal Bipolar Junction Transistor by Onsemi. Designed for switching applications, this NPN transistor offers reliable performance and high efficiency. With a minimum DC current gain of 55 and a maximum collector current of 0.1 A, this transistor is perfect for a wide range of electronic projects. The quality and expertise of Onsemi ensure that you are getting a product that is built to last. Upgrade your designs today with the MPS3397 and experience the difference in performance and reliability that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: NPN

Offers efficient switching capabilities for electronic circuits, making it suitable for various applications.

Configuration: SINGLE

Simplified design and operation, making it easy to integrate into circuits and requiring less complex circuitry.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and efficiency in switching operations.

Package Shape: ROUND

Compact and space-saving design, ideal for applications where space is limited.

Terminal Form: THROUGH-HOLE

Provides secure and reliable connections, enhancing the overall stability and performance of the transistor.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation capability, this transistor can handle high power levels without overheating, ensuring reliability in demanding applications.

Package Style (Meter): CYLINDRICAL

Unique cylindrical package style that offers a distinctive look and may fit specific design requirements.

Minimum DC Current Gain (hFE): 55

The high DC current gain ensures that the transistor amplifies input signals effectively, providing accurate and reliable output.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 25 V

The high collector-emitter voltage rating allows the transistor to handle higher voltage levels, expanding its range of applications.

Transistor Element Material: SILICON

Silicon material offers superior performance and reliability, making this transistor a high-quality choice for various electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a high collector current rating, this transistor can handle higher current levels, making it suitable for applications where high current is required.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides excellent solderability and conductivity, ensuring reliable connections for the transistor.

Terminal Position: BOTTOM

Bottom terminal position for easy and secure installation on PCBs, facilitating the assembly process and improving reliability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS3397 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

55

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MPS3397 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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