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MPS3638ARLRM

Onsemi

MPS3638ARLRM by Onsemi

MPS3638ARLRM by Onsemi is a PNP BJT transistor with hFE of 20, VCEO of 25V, and IC of 0.5A. Ideal for switching applications with a max operating temp of 150 °C. Its cylindrical package and through-hole terminals make it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,974 parts In-Stock

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Digiode

USA . 1,927 parts In-Stock

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TANS Electronics

Latvia . 4,011 parts In-Stock

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SupplyDigital Components

Austria . 3,388 parts In-Stock

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Kulean Microsystems

USA . 2,927 parts In-Stock

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Corphita

USA . 2,409 parts In-Stock

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Problanco Electronics

Mexico . 1,120 parts In-Stock

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UHIMA Technologies

Türkiye . 871 parts In-Stock

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Corohmni

South Africa . 408 parts In-Stock

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Overview

Unleash the power of innovation with the MPS3638ARLRM by Onsemi. As a leading manufacturer in the industry, Onsemi delivers unparalleled quality and reliability in small signal bipolar junction transistors (BJTs). Perfect for switching applications, this PNP transistor offers a seamless performance with a high DC current gain, low turn-on/off times, and a wide operating temperature range. Whether you're designing circuits for automotive, industrial, or consumer electronics, the MPS3638ARLRM provides the value, benefits, and advantages you need to take your projects to the next level. Elevate your designs with Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Package Shape: ROUND

Compact and space-saving design for better integration in circuits.

Terminal Form: THROUGH-HOLE

Ease of installation and soldering onto circuit boards.

No. of Terminals: 3

Simple connection setup with only three terminals.

Package Style (Meter): CYLINDRICAL

Easy to mount and secure in place within a circuit.

Minimum DC Current Gain (hFE): 20

Consistent and reliable amplification of current signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various environments.

Maximum Collector-Emitter Voltage: 25 V

Handles high voltages safely, ensuring reliable performance.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties for optimal transistor performance.

Maximum Turn On Time (ton): 75 ns

Fast turn on time for quick response in switching applications.

Maximum Collector Current (IC): 0.5 A

Sufficient collector current rating for various low-power applications.

Maximum Turn Off Time (toff): 170 ns

Quick turn off time to minimize switching losses.

Terminal Finish: TIN LEAD

Provides a reliable connection and solderability.

Terminal Position: BOTTOM

Facilitates easy and secure placement on circuit boards.

Nominal Transition Frequency (fT): 150 MHz

High frequency capability for fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS3638ARLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

170 ns

Maximum Turn On Time (ton):

75 ns

Trade Compliance

MPS3638ARLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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