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MPS3638ARL

Onsemi

MPS3638ARL by Onsemi

MPS3638ARL by Onsemi is a PNP BJT transistor with hFE of 20, VCEO of 25V, and IC of 0.5A. Ideal for switching applications, it has a max operating temp of 150 °C and fT of 150MHz. The package style is cylindrical with through-hole terminals in a plastic/epoxy body.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 451 parts In-Stock

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Digiode

USA . 180 parts In-Stock

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SupplyDigital Components

Austria . 5,218 parts In-Stock

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Problanco Electronics

Mexico . 3,959 parts In-Stock

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Kulean Microsystems

USA . 1,399 parts In-Stock

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TANS Electronics

Latvia . 1,153 parts In-Stock

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Corphita

USA . 600 parts In-Stock

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Corohmni

South Africa . 453 parts In-Stock

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UHIMA Technologies

Türkiye . 182 parts In-Stock

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Overview

Discover the power of the MPS3638ARL by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that is perfect for switching applications. With its PNP configuration and high operating temperature, this transistor offers unparalleled reliability and performance. From its durable plastic/epoxy package to its fast turn-on and turn-off times, the MPS3638ARL provides exceptional value for all your electronic projects. Trust in Onsemi's reputation for excellence and experience the benefits of using the MPS3638ARL in your next design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside, increasing the reliability and longevity of the transistor.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design by using a single transistor package.

Transistor Application: SWITCHING

Designed for switching applications, providing fast switching speeds and efficient performance.

Package Shape: ROUND

Compact and space-saving design, suitable for applications where space is limited.

No. of Terminals: 3

Provides the necessary connections for the transistor to function in a circuit.

Terminal Form: THROUGH-HOLE

Easy to solder onto a PCB, making it convenient for assembly.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for various industrial applications.

Maximum Collector-Emitter Voltage: 25 V

Can handle up to 25 volts, suitable for low-voltage applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling currents up to 0.5 amps, suitable for small to medium power applications.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for high-speed operation, making it ideal for applications requiring fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS3638ARL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

170 ns

Maximum Turn On Time (ton):

75 ns

Trade Compliance

MPS3638ARL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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