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MPS3390

Onsemi

MPS3390 by Onsemi

MPS3390 by Onsemi is a NPN BJT transistor with 3 terminals and 0.625W power dissipation. With hFE of 400, it operates up to 150 °C and handles 0.1A collector current. Ideal for amplifier applications due to its 100MHz transition frequency and 25V collector-emitter voltage capacity in a cylindrical package.

Median Price

$1.200

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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TEDSS.com

USA . 1,859 parts In-Stock

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$1.200

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$0.380

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SPM Sales

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Vyrian

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Digiode

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Electronic Expediters

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Corohmni

South Africa . 432 parts In-Stock

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TANS Electronics

Latvia . 6,882 parts In-Stock

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SupplyDigital Components

Austria . 5,638 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 777 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 104 parts In-Stock

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Overview

Power up your applications with the MPS3390 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for amplifiers. With its NPN polarity and single configuration, this transistor offers unmatched reliability and performance. The cylindrical package shape and wire terminals make it easy to integrate into your designs. Whether you're working on audio amplifiers or signal processing systems, the MPS3390 delivers superior power dissipation and high DC current gain. Trust Onsemi for cutting-edge technology and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides durability and insulation, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Maximum Power Dissipation: 0.625 W

High maximum power dissipation allows for reliable use in amplifier circuits without overheating.

Package Shape: ROUND

Round package shape facilitates easy mounting and handling during assembly.

Terminal Form: WIRE

Wire terminal form provides secure connections and flexibility in circuit design.

No. of Terminals: 3

3 terminals ensure proper connections and functionality in amplifier circuits.

Maximum Collector-Emitter Voltage: 25 V

High maximum collector-emitter voltage rating allows for use in a wide range of amplifier circuits.

Maximum Collector Current: 0.1 A

Maximum collector current rating of 0.1 A ensures efficient amplification with reliable performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS3390 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

400

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS3390 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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