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MPS6521G

Onsemi

MPS6521G by Onsemi

MPS6521G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 25V and max current of 0.1A. With a min DC current gain of 300, it's ideal for amplifier applications at up to 150 °C operating temperature. The package style is cylindrical with through-hole terminals for easy installation.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 16,129 parts In-Stock

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$0.050

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$0.050

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Distributors (In-Stock)

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Digiode

USA . 1,479 parts In-Stock

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$0.048

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Vyrian

USA . 8,601 parts In-Stock

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Corphita

USA . 547 parts In-Stock

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$0.045

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547

$0.045

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Corohmni

South Africa . 436 parts In-Stock

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$0.050

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436

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AZTECH Wire

Italy . 915 parts In-Stock

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$16.770

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QUARKTWIN TECHNOLOGY LTD

USA . 17,031 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,011 parts In-Stock

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TANS Electronics

Latvia . 5,100 parts In-Stock

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SupplyDigital Components

Austria . 3,927 parts In-Stock

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Kulean Microsystems

USA . 3,781 parts In-Stock

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Kepictronics

USA . 1,611 parts In-Stock

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Problanco Electronics

Mexico . 1,478 parts In-Stock

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UHIMA Technologies

Türkiye . 483 parts In-Stock

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Overview

Discover the unparalleled performance and reliability of the MPS6521G by Onsemi. As a leading manufacturer in the industry, Onsemi's Small Signal Bipolar Junction Transistors (BJT) are known for their top-notch quality and precision engineering. Ideal for amplifier applications, this NPN transistor boasts a high DC current gain (hFE) of 300, ensuring optimal performance. With a peak transition frequency of 340 MHz and a maximum collector-emitter voltage of 25V, the MPS6521G offers unbeatable value and efficiency. Elevate your projects with the superior technology of Onsemi's MPS6521G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and resistance to high temperatures, ensuring the product lasts longer and performs well in various conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and have good linearity, making them suitable for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Maximum Power Dissipation: 0.625 W

With a higher maximum power dissipation, this transistor can handle more power and heat, making it suitable for applications that require high power handling capabilities.

Minimum DC Current Gain (hFE): 300

A higher minimum DC current gain ensures the transistor amplifies the input signal effectively, providing consistent and reliable amplification.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 25 V

With a higher collector-emitter voltage rating, this transistor can handle higher voltage levels, making it suitable for applications that require voltage amplification.

Maximum Collector Current (IC): 0.1 A

Capable of handling higher collector current, this transistor is suitable for applications that require higher current amplification.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides good conductivity and corrosion resistance, ensuring stable connections and longevity of the transistor.

Nominal Transition Frequency (fT): 340 MHz

With a high nominal transition frequency, this transistor can amplify higher frequency signals effectively, making it suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6521G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS6521G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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