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PZT3906T1G

Onsemi

PZT3906T1G by Onsemi

PZT3906T1G by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for small outline packages in applications requiring a high transition frequency up to 250MHz such as signal amplification in electronic circuits.

Median Price

$0.363

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.363

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700

$0.363

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Chip Stock

USA . 54,000 parts In-Stock

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54,000

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Vyrian

USA . 5,889 parts In-Stock

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5,889

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Flip Electronics

USA . 4,000 parts In-Stock

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4,000

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Digiode

USA . 2,345 parts In-Stock

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2,345

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 299 parts In-Stock

1+ parts

$0.349

100+ parts

-

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299

$0.349

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.356

100+ parts

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1k+ parts

$0.342

10k+ parts

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2,000

$0.356

-

$0.342

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Argo Parts USA

USA . 3,303 parts In-Stock

1+ parts

$0.363

100+ parts

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1k+ parts

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10k+ parts

$0.352

3,303

$0.363

-

-

$0.352

Continental Prestige Electronics

USA . 887 parts In-Stock

1+ parts

$0.363

100+ parts

-

1k+ parts

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$0.356

887

$0.363

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-

$0.356

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.370

100+ parts

$0.370

1k+ parts

$0.370

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-

150

$0.370

$0.370

$0.370

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Component Stockers USA

USA . 1,727 parts In-Stock

1+ parts

$0.790

100+ parts

$0.480

1k+ parts

$0.340

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1,727

$0.790

$0.480

$0.340

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Aztec Data Supply Inc.

USA . 4,831 parts In-Stock

1+ parts

$1.325

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4,831

$1.325

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AZTECH Wire

Italy . 584 parts In-Stock

1+ parts

$18.560

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584

$18.560

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Semicontronic

India . 750 parts In-Stock

1+ parts

$29.050

100+ parts

$28.324

1k+ parts

$28.178

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750

$29.050

$28.324

$28.178

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Ampacity Inc.

Singapore . 1,027 parts In-Stock

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$64.050

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1,027

$64.050

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Kepictronics

USA . 27,860 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,986 parts In-Stock

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15,986

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TANS Electronics

Latvia . 7,859 parts In-Stock

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7,859

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SupplyDigital Components

Austria . 7,057 parts In-Stock

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7,057

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Kulean Microsystems

USA . 6,452 parts In-Stock

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6,452

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Problanco Electronics

Mexico . 5,537 parts In-Stock

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5,537

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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2,800

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Corphita

USA . 916 parts In-Stock

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916

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UHIMA Technologies

Türkiye . 704 parts In-Stock

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704

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Overview

Elevate your electronic designs with the PZT3906T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by industry leader Onsemi, this PNP transistor is perfect for a variety of applications, from amplifiers to signal processing circuits. With a maximum collector-emitter voltage of 40V and a nominal transition frequency of 250 MHz, this transistor delivers superior functionality. Trust in Onsemi's expertise and experience in semiconductor manufacturing to bring value and advantages to your projects with the PZT3906T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and cost-effectiveness for a wide range of applications.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, such as amplification and switching circuits.

Configuration: SINGLE

Simplified design and easy to use in various circuits.

Surface Mount: YES

Allows for easy and quick installation on PCBs, saving time and effort.

Terminal Form: GULL WING

Provides reliable connection and ease of soldering on the PCB.

No. of Terminals: 4

Offers sufficient terminals for connecting to other components in a circuit.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels, suitable for many low-power applications.

Package Style (Meter): SMALL OUTLINE

Compact size makes it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 30

Provides consistent and predictable amplification performance.

Maximum Operating Temperature: 150 °C

Can withstand high-temperature environments, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications requiring a lower voltage handling capability.

Transistor Element Material: SILICON

Common and reliable material choice for transistors, ensuring consistent performance.

Maximum Turn On Time (ton): 70 ns

Fast switching speed ideal for high-frequency applications.

Maximum Collector Current (IC): 0.2 A

Sufficient current handling capability for low-power applications.

Maximum Turn Off Time (toff): 300 ns

Fast turn-off time for efficient switching operations.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant terminal finish.

Terminal Position: DUAL

Allows for versatile mounting options on the PCB.

Case Connection: COLLECTOR

Simplifies the circuit layout and connection.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

Suitable for standard reflow soldering processes.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency for fast signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT3906T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

PZT3906T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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